Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2013, том 16
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Semicond. Physics Quantum Electronics & Optoelectronics, 2013, № 3
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Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions

Fodchuk, I.M. ; Gutsuliak, I.I. ; Zaplitniy, R.A. ; Balovsyak, S.V. ; Yaremiy, I.P. ; Bonchyk, O.Yu. ; Savitskiy, G.V. ; Syvorotka, I.M. ; Lytvyn, P.M.

Інший ID: PACS 75.50.Gg

URI: http://dspace.nbuv.gov.ua/handle/123456789/117733

Посилання: Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions / І.M. Fodchuk, I.I. Gutsuliak, R.A. Zaplitniy, S.V. Balovsyak, І.P. Yaremiy, О.Yu. Bonchyk, G.V. Savitskiy, І.M. Syvorotka, P.M. Lytvyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 246-252. — Бібліогр.: 24 назв. — англ.

Дата: 2013

Завантажень: 407

Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions

Анотація:

The scattering field gradient maps of surface layer magnetic domains in Y₂.₉₅La₀.₀₅Fe₅O₁₂ iron-yttrium garnet modified by high-dose ion implantation with nitrogen ions N+ were obtained by the method of magnetic force microscopy. It was found that improving the magnetic properties of thin films, which includes reducing the observed magnetic losses after high-dose implantation, is accompanied by essential ordering of magnetic domains on the surface of the implanted films. There is a direct dependence of the magnetic properties on the dose of implanted atoms, accompanied by a significant dispersion and amorphization of surface layer and formation of a clear magnetic structure.

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