Перегляд за автором "Danylyuk, S.V."

Сортувати за: Порядок: Результатів:

  • Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions 
    Belyaev, A.E.; Foxon, C.T.; Novikov, S.V.; Makarovsky, O.; Eaves, L.; Kappers, M.J.; Barnard, J.S.; Humphreys, C.J.; Danylyuk, S.V.; Vitusevich, S.A.; Naumov, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Present paper studies double barrier resonant tunnelling diodes (DB-RTD) based on GaN/AlGaN heterostructures, grown by plasma-assisted molecular beam epitaxy (PA-MBE). Tunnel (current-voltage, I–V) and capacitance ...
  • Ultra-high field transport in GaN-based heterostructures 
    Vitusevich, S.A.; Danylyuk, S.V.; Danilchenko, B.A.; Klein, N.; Zelenskyi, S.E.; Drok, E.; Avksentyev, A.Yu.; Sokolov, V.N.; Kochelap, V.A.; Belyaev, A.E.; Petrychuk, M.V.; Luth, H. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    This paper describes measurements of the velocity of electrons at electric fields up to 100 kV/cm in GaN/AlGaN heterostructures. In order to avoid the Joule heating effect, a pulse technique with a time sweep of 10-30 ns ...