Перегляд за автором "Bratus, V.Ya."

Сортувати за: Порядок: Результатів:

  • Controlling the photoluminescence spectra of porous nc-Si–SiOx structures by vapor treatment 
    Dan’ko, V.A.; Bratus, V.Ya.; Indutnyi, I.Z.; Lisovskyy, I.P.; Zlobin, S.O.; Michailovska, K.V.; Shepeliavyi, P.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The effect of HF and H₂O₂ vapor treatment on the spectral composition and intensity of photoluminescence (PL) in porous oblique deposited nc-Si–SiOx structures have been studied using FTIR, electron-spin resonance (EPR) ...
  • Thermal annealing and evolution of defects in neutron-irradiated cubic SiC 
    Bratus, V.Ya.; Melnyk, R.S.; Shanina, B.D.; Okulov, S.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    A careful study of neutron-irradiated cubic SiC crystals (3С-SiC(n)) has been performed using electron paramagnetic resonance (EPR) in the course of their thermal annealing within the 200…1100 °C temperature range. Several ...