Перегляд за автором "Berkutov, I.B."

Сортувати за: Порядок: Результатів:

  • Berkutov, I.B.; Andrievskii, V.V.; Komnik, Y.F.; Mironov, O.A. (Физика низких температур, 2017)
    Multisubband transport of the p-type Si₀.₄Ge₀.₆/Ge/Si₀.₄Ge₀.₆ heterostructure has been investigated by means of magnetotransport measurements at low temperatures and high magnetic fields. Two frequency Shubnikov–de Haas ...
  • Berkutov, I.B.; Andrievskii, V.V.; Komnik, Yu.F.; Kolesnichenko, Yu.A.; Morris, R.J.H.; Leadley, D.R.; Mironov, O.A. (Физика низких температур, 2012)
    The Shubnikov–de Haas oscillations method of the effective mass extraction was illustrated by the magnetotransport properties investigation of two-dimensional hole gas in Si₁₋xGex (x = 0.13, 0.36, 0.95, 0.98) QWs. We have ...
  • Berkutov, I.B.; Andrievskii, V.V.; Komnik, Yu.F.; Myronov, M.; Mironov, O.A. (Физика низких температур, 2008)
    The effect of the charge carriers overheating in a two-dimensional (2D) hole gas in a Si1–xGex quantum well, where x = 0.13; 0.36; 0.8, 0.95, has been realized. The Shubnikov–de Haas (SdH) oscillation amplitude was used ...
  • Berkutov, I.B.; Andrievskii, V.V.; Kolesnichenko, Yu.A.; Komnik, Yu.F.; Mironov, O.A. (Физика низких температур, 2018)
    The charge carrier overheating effect was studied in the p-type Si₀.₄Ge₀.₆/Ge/Si₀.₄Ge₀.₆ heterostructure with two subband occupy. The temperature dependences of hole-phonon relaxation time τh-ph at weak magnetic fields ...
  • Prokopov, O.I.; Ovsiienko, I.V.; Matzui, L.Yu.; Len, T.A.; Naumova, D.D.; Berkutov, I.B.; Mirzoiev, I.G.; Le Normand, F. (Физика низких температур, 2017)
    The presented work is devoted to investigations of manifestation of quantum effects of weak localization and interaction of charge carriers in electrical conductivity of acceptor graphite intercalation compounds (CICs). ...