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періодичних видань НАН України
Germanium quantum well with two subbands occupied: kinetic properties
Репозиторій DSpace/Manakin
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Germanium quantum well with two subbands occupied: kinetic properties
Тема:
Квантовые эффекты в полупpоводниках и диэлектриках
Інший ID:
PACS: 72.20.My, 73.20.Fz
Посилання:
Germanium quantum well with two subbands occupied: kinetic properties / I.B. Berkutov, V.V. Andrievskii, Y.F. Komnik, O.A. Mironov // Физика низких температур. — 2017. — Т. 43, № 10. — С. 1515-1521. — Бібліогр.: 12 назв. — англ.
Підтримка:
The authors are grateful to O. E. Raichev for useful discussions. Measurements were made in International Laboratory of High Magnetic Fields and Low Temperatures, Wroclaw, Poland.
Дата:
2017
Переглядів:
277
Завантажень:
211
Анотація:
Multisubband transport of the p-type Si₀.₄Ge₀.₆/Ge/Si₀.₄Ge₀.₆ heterostructure has been investigated by means of magnetotransport measurements at low temperatures and high magnetic fields. Two frequency Shubnikov–de Haas oscillations indicate occupation of two subbands. This allows us to determine the densities and mobilities of the charge carriers on each subband. Shubnikov–de Haas oscillations reveal two 2D conduction subbands with carrier effective masses of 0.112m₀ and 0.131m₀. The quantum Hall ferromagnetic states which results from the crossing of two Landau levels with opposite spin and different subband was observed in SiGe systems for the first time.
