Перегляд за автором "Beketov, G.V."

Сортувати за: Порядок: Результатів:

  • AFM study of micromorphology and microscopic growth mechanisms of Hg₁₋x CdxTe LPE epitaxial layers 
    Beketov, G.V.; Rashkovetskiy, L.V.; Rengevych, O.V.; Zhovnir, G.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Mercury cadmium telluride epitaxial layers exhibiting large areas with nearly atomically-flat surface were grown using liquid phase epitaxy (LPE) from Te-rich solution in closed system. Evolution of surface morphology ...
  • Biochemical passivation of metal surfaces for sensor application: reactive annealing of polycrystalline gold films in hydrogen sulfide atmosphere 
    Snopok, B. A.; Kostyukevych, K.V.; Beketov, G.V.; Zinio, S.A.; Shirshov, Yu.M.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The formation of AuxSy interfacial layer by reactive annealing of gold films in H₂S atmosphere is investigated. This seems to be a technologically favorable technique for the large-scale and low-cost fabrication of ...
  • Enhanced 2D plotting method for scanning probe microscopy imaging 
    Beketov, G.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    An enhanced 2D plotting method for scanning probe microscopy imaging implementing a gradient-based value mapping for pseudocolor images and its application to studies of epitaxial layer surface morphology is presented. It ...
  • Hot wall growth and properties of lead telluride films doped by germanium and gallium 
    Lashkarev, G.V.; Radchenko, M.V.; Slynko, E.I.; Vodopiyanov, V.N.; Asotsky, V.V.; Kaminsky, V.M.; Beketov, G.V.; Rengevich, E.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The researches results of films (PbTe)₁₋y(GaTe)y and (Pb₁₋xGexTe)₁₋y(GaTe)y of n-type conductivity with carrier concentration within (2⋅10¹⁷÷9⋅10¹⁸) cm⁻³ are represented. The films were growth by modified hot wall technology ...
  • Refractory contact to a-SiC produced by laser technology methods 
    Fedorenko, L.L.; Kiseleov, V.S.; Svechnikov, S.V.; Yusupov, M.M.; Beketov, G.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Developed in the paper are method and technological scheme to obtain ohmic contacts (OC) to a-SiC(:N), Nd - Na ~1 - 3.10¹⁸ cm⁻³ by pulse laser deposition (PLD) of multilayer structures Ni/W/Si₃N₄/W and the following laser ...
  • Visualization of submicron Si-rods by SPR-enhanced total internal reflection microscopy 
    Rengevych, O.V.; Beketov, G.V.; Ushenin, Yu.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The potential of surface plasmon resonance-enhanced total internal reflection microscopy for visualization of submicron particles has been demonstrated using submicron-sized silicon rods as a test object. Submicron Si-rods ...