Перегляд за автором "Ahmad, I."

Результати 1-2 з 2

Optimal solution in producing 32-nm CMOS technology transistor with desired leakage current

Elgomati, H.A.; Ahmad, I.; Salehuddin, F.; Hamid, F.A.; Zaharim, A.; Majlis, B.Y.; Apte, P.R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)

The objective of this paper is to optimize the process parameters of 32-nm CMOS process to get minimum leakage current. Four process parameters were chosen, namely: (i) source-drain implantation, (ii) source-drain ...
The effect of doping methods on electrical properties and micromorphology of polysilicon gate electrode in submicron CMOS devices

Ahmad, I.; Omar, A.; Mikdad, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

Two doping methods for introducing phosphorus atoms into polysilicon to form a gate electrode for 0.5 mm CMOS were investigated. These methods were ion implantation and the ”in-situ” one (it is also known as thermal ...

Результати 1-2 з 2

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