Перегляд за автором "Sizov, F.F."

Сортувати за: Порядок: Результатів:

  • Sakhno, M.V.; Gumenjuk-Sichevska, J.V.; Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Some properties of printed antennas and arrays for uncooled silicon plasmon detector arrays based on field effect transistors are shortly discussed. Antenna geometry has been optimised for maximising gain at 300 GHz. It ...
  • Shapovalov, A.P.; Korotash, I.V.; Rudenko, E.M.; Sizov, F.F.; Dubyna, D.S.; Osipov, L.S.; Polotskiy, D.Yu.; Tsybri, Z.F.; Korchovyi, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Aluminum nitride (AlN) film coatings have been obtained by a new technique of hybrid helikon-arc ion-plasma deposition. Possibility to combine the magnetic-filtered arc plasma deposition technique with a treatment in RF ...
  • Shapovalov, A.P.; Korotash, I.V.; Rudenko, E.M.; Sizov, F.F.; Dubyna, D.S.; Osipov, L.S.; Polotskiy, D.Yu.; Tsybrii, Z.F.; Korchovyi, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Aluminum nitride (AlN) film coatings have been obtained by a new technique of hybrid helikon-arc ion-plasma deposition. Possibility to combine the magnetic-filtered arc plasma deposition technique with a treatment in RF ...
  • Golenkov, A.G.; Zhuravlev, K.S.; Gumenjuk-Sichevska, J.V.; Lysiuk, I.O.; Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Un-cooled AlGaN/GaN-based heterojunction field-effect transistors (HFET) designed on sapphire (0001) substrates were considered as 140 GHz direct detection detectors without any specially attached antennas. The noise ...