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Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2015, том 18
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2015, № 1
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Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs
Інший ID:
DOI: 10.15407/spqeo18.01.040
PACS 07.57.Kp, 73.40.-c, 85.30.Tv
PACS 07.57.Kp, 73.40.-c, 85.30.Tv
Посилання:
Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs / A.G. Golenkov, K.S. Zhuravlev, J.V. Gumenjuk-Sichevska, I.O. Lysiuk, F.F. Sizov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 40-45. — Бібліогр.: 21 назв. — англ.
Підтримка:
Authors are very thankful to Research Fellow Svetlana G. Bunchuk for her scrupulous attitude towards preparation of the samples, and Dr. Mikolay V. Sakhno for useful discussions. This work was partly supported by Ukrainian Program of Basic Researches (grant No. 11/14-H) and joint project of Ukrainian National Academy of Sciences (grant No. 01-02-2012) and Siberian Branch of Russian Academy of Sciences (grant No. 15.1).
Дата:
2015
Переглядів:
707
Завантажень:
381
Анотація:
Un-cooled AlGaN/GaN-based heterojunction field-effect transistors (HFET) designed on sapphire (0001) substrates were considered as 140 GHz direct detection detectors without any specially attached antennas. The noise equivalent power (NEP) of these detectors was ~ 10⁻¹⁰ W/Hz¹/² in the observed radiation frequency range at ambient temperatures. It has been shown that the ultimate value for the AlGaN/GaN HFET detectors (in 0.25-μm technology) can reach NEPopt ≈ 6•10⁻¹² W/Hz¹/² , and it is 3-fold lower than that for Si MOSFET (in 0.35-μm technology).
