Electric barrier formation in kind of connected dip and hump of electric potential near ECR point

dc.contributor.author	Barchuk, S.V.
dc.contributor.author	Lapshin, V.I.
dc.contributor.author	Maslov, V.I.
dc.contributor.author	Onishchenko, I.N.
dc.contributor.author	Tretyakov, V.N.
dc.date.accessioned	2015-03-23T09:35:31Z
dc.date.available	2015-03-23T09:35:31Z
dc.date.issued	2002
dc.identifier.citation	Electric barrier formation in kind of connected dip and hump of electric potential near ECR point / S.V. Barchuk, V.I. Lapshin, V.I. Maslov, I.N. Onishchenko, V.N. Tretyakov // Вопросы атомной науки и техники. — 2002. — № 5. — С. 98-100. — Бібліогр.: 1 назв. — англ.	uk_UA
dc.identifier.issn	1562-6016
dc.identifier.other	PACS: 52.25.-b
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/78923
dc.description.abstract	The self-consistent formation, observed in experiments, of the solitary barrier for plasma electrons and ions has been analytically described.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Національний науковий центр «Харківський фізико-технічний інститут» НАН України	uk_UA
dc.relation.ispartof	Вопросы атомной науки и техники
dc.subject	Plasma electronics	uk_UA
dc.title	Electric barrier formation in kind of connected dip and hump of electric potential near ECR point	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA