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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Сортувати за: Порядок: Результатів:

  • Radar cross section study from wave scattering structures 
    Redadaa, S.; Boualleg, A.; Benslama, N. Merabtine M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Radar remote sensing deals with the extraction of object information from electromagnetic wave parameters. To fully exploit the potential of acquiring quantitative information requires a detailed description of the microwaves ...
  • Radiation/annealing-induced structural changes in GexAs₄₀-xS₆₀ glasses as revealed from high-energy synchrotron X-ray diffraction measurements 
    Kavetskyy, T.S.; Tsmots, V.M.; Stepanov, A.L. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Local atomic structure of GexAs₄₀-xS₆₀ glasses (x = 16, 24, 32, and 36) has been investigated in the -irradiated (2.41 MGy dose) and annealed after irradiation states by using the high-energy synchrotron X-ray diffraction ...
  • Radiation dynamics of injection lasers with saturating absorber in resonator 
    Manak, I.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    The structure of a GaAlAs laser with saturating absorber in a resonator and a method of research of the light generation dynamics with the use of an optical stroboscopic oscilloscope OSO-1 which has a time resolution of ...
  • Radiation effects on electronic circuits in a spatial environment 
    Merabtine, N.; Benslama, M.; Benslama, A.; Sadaoui, Dj. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The failings bound to the deterioration of the components under irradiations are complex and numerous. This paper describes the different kinds of radiations present in the space as well as their interactions with the ...
  • Radiation hardness of AlAs/GaAs-based resonant tunneling diodes 
    Belyaev, A.A.; Belyaev, A.E.; Konakova, R.V.; Vitusevich, S.A.; Milenin, V.V.; Soloviev, E.A.; Kravchenko, L.N.; Figielski, T.; Wosinski, T.; Makosa, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The total dose effects of ⁶⁰Co γ-radiation on the electrical properties of double-barrier Resonant Tunneling Diodes have been studied. The devices manifest enhanced radiation hardness and conserve their operating parameters ...
  • Radiation-induced changes in infra-red spectrum of black zinc diphosphide monocrystals 
    Kudin, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    For the first time the effect of ionizing particles of different type (gamma-quanta, electrons) and neutrons upon infra-red spectra of zinc diphosphide has been studied. It was shown that the defects of phosphorus sublattice, ...
  • Radiation-induced optical darkening and oxidation effects in As₂S₃ glass 
    Kavetskyy, T.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The long-wave shift of fundamental optical absorption edge with decreasing the sample’s transparency in the saturation region in the As₂S₃ bulk glass (2 mm thick) due to radiation treatment by ⁶⁰Co y-quanta with the average ...
  • Radiation-induced structural changes in chalcogenide glasses as revealed from Raman spectroscopy measurements 
    Kavetskyy, T.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Radiation-induced structural changes in the chalcogenide glasses of (As₂S₃)x(GeS₂)₍₁₋х₎ system with x = 0.1, 0.2, 0.4, and 0.6 corresponding to the chemical compositions Ge₂₈.₁₂₅As₆.₂₅S₆₅.₆₂₅, Ge₂₃.₅As₁₁.₈S₆₄.₇, Ge₁₅.₈As₂₁S₆₃.₂, ...
  • Radiation power spectral distribution of two electrons moving in magnetic fields 
    Konstantinovich, A.V.; Melnychuk, S.V.; Konstantinovich, I.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Integral expressions for spectral distributions of the radiation power for systems of non-interacting point charged particles moving on arbitrary trajectory in electromagnetic fields in isotropic transparent media and in ...
  • Radiation-resistant ultraviolet curable polyurethane films with CdSe-ZnS сore-shell nanocrystals 
    Kulish, N.R.; Kunets, V.P.; Narsingi, K.Y.; Manasreh, M.O.; Kunets, Vas. P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The effect of proton fluence of different doses (up to 9×10¹⁵ protons/cm² ) on the absorption spectra of UV-cured polyurethane films doped by CdSe/ZnS nanocrystals has been investigated. We found that the degradation of ...
  • Radiation-stimulated processes in silicon structures with contacts based on TiN 
    Nasyrov, M.U.; Ataubaeva, A.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The influence of irradiation on the structural properties of titanium nitride films deposited on silicon wafers has been considered. It has been shown that depending on the energy, fluence and type of irradiation ion, ...
  • Radiation-stimulated processes in silicon structures with contacts based on TiN 
    Nasyrov, M.U.; Ataubaeva, A.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The influence of irradiation on the structural properties of titanium nitride films deposited on silicon wafers has been considered. It has been shown that depending on the energy, fluence and type of irradiation ion, ...
  • Radiation-stimulated relaxation of internal mechanical straines in homoepitaxial GaP films 
    Gentsar, P.A.; Kudryavtsev, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The electroreflectance method based on the electrolyte technique is used for investigation of electron transitions E₀, E₀ + Δ₀ in homoepitaxial films n-GaP (111) with the electron concentration 5.7*10²³ m⁻³ before and after ...
  • Radiative recombination in BiI₃(Mn) and BiI₃(Cr) layered single crystals 
    Motsnyi, F.V.; Dorogan, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The photoluminescence spectra of BiI₃(Mn) and BiI₃(Cr) single crystals were studied. The new bands at λ = 1.1 and λ = 1.83 μm were registered at the temperature 4.2 K. It was shown that the first and second bands arise due ...
  • Radiative recombination in initial and electron-irradiated GaP crystals 
    Hontaruk, O.; Konoreva, O.; Litovchenko, P.; Manzhara, V.; Opilat, V.; Pinkovska, M.; Tartachnyk, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Photoluminescence of GaP crystals irradiated by 1 MeV electrons was studied at 4.2 K. Samples were prepared using various technologies and doped by Te, Zn, Mg and N. Emission spectra were analyzed as dependent on the ...
  • Radiative recombination of the PVK/C60 molecular complexes with the radiation damages 
    Коbus, E.S.; Dmytrenko, O.P.; Kulish, N.P.; Prylutskyy, Yu.I.; Belyy, N.M.; Syromyatnikov, V.G.; Studzinskyy, S.L.; Zabolotnyy, M.A.; Gryn'ko, D.A.; Shchur, D.V.; Shlapatskaya, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The relaxation processes of electronic excitations in the films composed from a mixture of the amorphous semiconductors of polyvinylcarbazole and C₆₀ fullerenes (PVC/C₆₀) with different contents of nanocluster molecules ...
  • Radioluminescent, thermoluminescent and dosimetric properties of X-ray phosphors 
    Ignatovych, M.; Kelemen, A.; Otvas, N.; Peto, A.; Ogenko, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Time-resolved radioluminescence (RL) of X-ray phosphors: BaFCl:Eu, ZnS.CdS:Ag and Y₂О₃:Еu, which exhibited ultraviolet (lmax = 390 nm), yellow-green, (lmax = 530 nm) and red (lmax=620 nm) luminescence respectively, have ...
  • Raman scattering in sulphide glasses 
    Tolmachov, I.D.; Stronski, A.V.; Pribylova, H.; Vlček, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Raman spectra of two ternary glasses of composition Ge₅As₃₇S₅₈ and As₄Ge₃₀S₆₆ have been investigated. An influence of addition of third element on the spectra of binary glasses has been studied by comparison with spectra ...
  • Raman scattering of light in biaxial monocline β-ZnP₂ crystals 
    Gubanov, V.O.; Kulakovs’kij, V.D.; Poveda, R.A.; Yanchuk, Z.Z. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    In this paper we represent for the first time observed experimental data on non-resonant Raman scattering in a plate of β-ZnP₂. The high-frequency part of RS spectra КР β-ZnP₂ is determined by oscillations of sites in ...
  • Raman scattering of light in biaxial monocline β-ZnP₂ crystals 
    Gubanov, O.V.; Kulakovs’kij, V.D.; Poveda, R.A.; Yanchuk, Z.Z. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    In this paper we represent for the first time observed experimental data on non-resonant Raman scattering in a plate of β-ZnP₂. The high-frequency part of RS spectra КР β-ZnP₂ is determined by oscillations of sites in ...

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