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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Сортувати за: Порядок: Результатів:

  • Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties 
    Borblik, V.L.; Korchevoi, A.A.; Nikolenko, A.S.; Strelchuk, V.V.; Fonkich, A.M.; Shwarts, Yu.M.; Shwarts, M.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The technique of thermal vacuum deposition of Ge onto GaAs substrates has been used for obtaining nanocrystalline Ge films. Nanocrystalline character of the films is confirmed by atomic force microscopy of their surface ...
  • Nanocrystalline silicon carbide films for solar cells 
    Vlaskina, S.I.; Mishinova, V.I.; Rodionov, V.E.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Nanocrystalline silicon carbide (nc-SiC) films as protective coating and as solar cell material for a harsh environment, high temperatures, light intensities and radiation, were investigated. p- and n-types 100-mm silicon ...
  • Nanopatterning Au chips for SPR refractometer by using interference lithography and chalcogenide photoresist 
    Dan’ko, V.A.; Dorozinsky, G.V.; Indutnyi, I.Z.; Myn’ko, V.I.; Ushenin, Yu.V.; Shepeliavyi, P.E.; Lukaniuk, M.V.; Korchovyi, A.A.; Khrystosenko, R.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    This study reports on development of the interference lithography (IL) technique applying the resist based on chalcogenide glass films for fabrication of gold chips in the nform of periodic surface nanostructures for surface ...
  • Nanoprobe spectroscopy of capillary forces and its application for a real surface diagnostics 
    Efremov, A.A.; Lytvyn, P.M.; Anishchenko, А.O.; Dyachyns’ka, O.M.; Aleksyeyeva, T.A.; Prokopenko, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The paper presents an overview and analysis of the most reliable and at the same time rather simple theoretical models describing liquid nanomeniscus geometry and forces occurring between atomic force microscope (AFM) ...
  • Nanoscale tin dioxide films and zinc oxide hierarchical nanostructures for gas sensing applications 
    Klochko, N.P.; Klepikova, K.S.; Khrypunov, G.S.; Pirohov, O.V.; Novikov, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Nanoscale tin dioxide (SnO₂) and zinc oxide (ZnO) layers are considered as promising candidates for preparation of sensing elements for metal oxide semiconductor gas sensors. Tin dioxide films deposited by direct current ...
  • Nano-sized phase inclusions in As₂S₃ glass, films and fibers based on this glass 
    Mateleshko, N.; Mitsa, V.; Stronski, A.; Veres, M.; Koos, M.; Andriesh, A.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    In this report, the comparative analysis using Raman spectroscopy of the short-range order in amorphous As₂S₃ films deposited with different evaporation rates, volume glass and fiber based on this glass is presented. With ...
  • Nanostructures in lightly doped silicon carbide crystals with polytypic defects 
    Vlaskina, S.I.; Mishinova, G.N.; Vlaskin, L.V.; Rodionov, V.E.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    In this work, photoluminescence spectra of lightly doped SiC crystals with ingrown original defects are reported. Undoped SiC single crystals with the impurity concentration of ND – NA ~ (2…8)*10¹⁶ cm⁻³, NA ~ (2…8)*10¹⁷ ...
  • Narrow-gap piezoelectric heterostructure as IR detector 
    Sizov, F.F.; Smirnov, A.B.; Savkina, R.K.; Deriglazov, V.A.; Yakushev, M.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Narrow-gap mercury cadmium telluride thin films grown by MBE and LPE methods onto various substrates (HgCdTe/Si, HgCdTe/GaAs, HgCdTe/CdZnTe) were investigated as a piezoelectric heterostructure for IR detection. The ...
  • Negative dielectric permittivity of nonmagnetic crystals in the terahertz waveband 
    Felinskyi, S.G.; Korotkov, P.A.; Felinskyi, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Physical conditions for occurrence of the spectral bands with the negative dielectric permittivity in nonmagnetic crystalline media in the terahertz waveband have been studied in this work. It has been shown that damping ...
  • Negative magnetoresistance of heavily doped silicon p-n junction 
    Borblik, V.L.; Rudnev, I.A.; Shwarts, Yu.M.; Shwarts, M.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    At the liquid helium temperature and under application of magnetic fields up to 9.4 T, a voltage drop across a silicon diode with metallic conductivity of the emitter and base has been measured under passing a constant ...
  • New dyes for guest-host mode 
    Muravsky, A.; Agabekov, V.; Ariko, N.; Shachab, S.; Tolstik, A.; Malashko, P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    New guest-host dyes of red and purple colour suitable for fabrication of ultrathin film polarizer from polymerizable liquid crystals are developed. When the absorption spectrum of dye matches the photopic curve, samples ...
  • New fast-relaxed liquid crystal materials for optical communication networks 
    Garbovskiy, Yu.; Sadovenko, A.; Koval'chuk, A.; Klimusheva, G.; Bugaychuk, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Recording the dynamic holograms with microsecond relaxation times under action of laser pulses was obtained in composites based on the novel class of liquid crystals (LC), namely in ionic metal-alkanoates. Holographic ...
  • New features of surface plasmon resonance detected by modulation of electromagnetic radiation polarization 
    Berezhinsky, L.J.; Matyash, I.E.; Rudenko, S.P.; Serdega, B.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    Using a technique based on modulation of electromagnetic radiation polarization, we studied the features of surface plasmon resonance in gold nanofilms deposited onto the surface of a totally reflecting prism (fused ...
  • New formalism for self-consistent parameters optimization of highly efficient solar cells 
    Sachenko, A.V.; Kostylyov, V.P.; Kulish, M.R.; Sokolovsky, L.O.; Shkrebtii, A.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    We analyzed self-consistently photoconversion efficiency of direct-gap A³B⁵ semiconductors based solar cells and optimized their main physical characteristics. Using gallium arsenide (GaAs) as an example and new efficient ...
  • New ideas in electrodynamics: physical properties of time 
    Oleinik, V.P.; Borimsky, Yu.C.; Arepjev, Yu.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The phenomenon of local dynamical inhomogeneity of time is predicted, which implies that the course of time along the trajectory of particle motion in the inertial reference frames moving relatively to each other depends ...
  • New interpretation of the boundary diffracted wave origin 
    Anokhov, S.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The important improvement for Young's model of diffraction is proposed. This interpretation is based on the statement about the existence of the energy transfer process directed from the remaining field towards the boundary ...
  • New method for estimating the refractive index of optical materials in spectrally selective elements 
    Manko, A.A.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    A numerical simulation of the scattering indicatrix in optical spectral-selective cylindrical form elements has been performed. As it follows from the results of the calculations, the shape of the scattering indicatrix of ...
  • New method of apertured electromagnetic field modeling 
    Anokhov, S.; Khizhnyak, A.; Lymarenko, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Using a new wave treatment of rigorous Sommerfield’s solution for a problem of plane wave diffraction on a perfectly conductive half-plane, it was obtained the solution for a problem of plane wave diffraction on a slit and ...
  • New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET 
    Merabtine, N.; Amourache, S.; Saidi, Y.; Zaabat, M.; Kenzai, Ch. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    New nonlinear model for simulating physical and geometrical parameters to determine the junctions capacities of "the Gallium Arsenide Metal Semiconductor Field Effect Transistor" GaAs MESFET are represented in this paper. ...
  • New possibility of retrospective EPR dosimetry 
    Vorona, I.; Ishchenko, S.; Okulov, S.; Petrenko, T.T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Tooth enamel plates irradiated by different types of radiation were studied by electron paramagnetic resonance imaging with local gradient of magnetic field. The dependence of radiation defect distributions on an irradiation ...

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