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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

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  • Magnetic and magnetoresistive characteristics of neutron-irradiated Si₀.₉₇Ge₀.₀₃ whiskers 
    Litovchenko, P.G.; Pavlovska, N.T.; Pavlovskyy, Yu.V.; Ugrin, Yu.O.; Luka, G.; Ostrovskyy, I.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The effect of 8.6∙10¹⁷ n/cm² with fast neutron irradiation on the magnetic susceptibility of Si₀.₉₇Ge₀.₀₃ thread-like crystals (whiskers) with impurity concentration near metal-insulator junction has been studied. ...
  • Magnetic field effect on the binding energy of a hydrogenic impurity in GaAs-Ga₁₋xAlxAs superlattice 
    Abouelaoualim, D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The binding energy of shallow hydrogenic impurity in GaAs-GaAs-Ga₁₋xAlxAs superlattices, under the influence of magnetic field, is theoretically studied following a variational procedure within the effective-mass approximation ...
  • Magnetic field impact on electrical properties of ZnSe-GaAs solid solutions 
    Brodovoy, А.V.; Veremenko, A.M.; Skryshevsky, V.A.; Vlasyuk, А.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    The influence of constant magnetic field on thermostimutated current, photoconductivity, and magnetic susceptibility of ZnSe-GaAs solid solutions were studied. It was shown that exposition in constant magnetic field results ...
  • Magnetic field-stimulated change of photovoltage in solar silicon crystals 
    Korotchenkov, O.O.; Steblenko, L.P.; Podolyan, A.O.; Kalinichenko, D.V.; Tesel’ko, P.O.; Kravchenko, V.M.; Tkach, N.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The effect of static magnetic field (B = 0.17 T) on composition of defects and lifetime of charge carriers in solar silicon crystals has been investigated. Studied in this work was the character of changes in electrical ...
  • Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions 
    Fodchuk, I.M.; Gutsuliak, I.I.; Zaplitniy, R.A.; Balovsyak, S.V.; Yaremiy, I.P.; Bonchyk, O.Yu.; Savitskiy, G.V.; Syvorotka, I.M.; Lytvyn, P.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The scattering field gradient maps of surface layer magnetic domains in Y₂.₉₅La₀.₀₅Fe₅O₁₂ iron-yttrium garnet modified by high-dose ion implantation with nitrogen ions N+ were obtained by the method of magnetic force ...
  • Magnetic-ordered and superconducting units inside surface layers of PbTe:Eu crystals grown from melt by using the Bridgman method 
    Zayachuk, D.M.; Ilyina, O.S.; Kaczorowski, D.; Mikityuk, V.I.; Shlemkevych, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Presented in this work are the results of the first systematic study of magnetic properties inherent to surface layers of PbTe:Eu crystals grown from melt with a low initial concentration of Eu impurity using the ...
  • Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As 
    Figielski, T.; Wosinski, T.; Morawski, A.; Pelya, O.; Makosa, A.; Dobrowolski, W.; Wrobel, J.; Sadowski, J.; Jagielski, J.; Ratajczak, J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We show that narrow constrictions, a few hundred nanometers wide, in ferromagnetic semiconductor (Ga,Mn)As layer exhibit large spin-related magnetoresistance. Moreover, we demonstrate that application of oxygen-ions ...
  • Magnetic susceptibility of n- and p-Si single crystals containing thermodonors 
    Babich, V.М.; Luchkevych, M.M.; Tsmots, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Using a series of experimental methods (Hall effect, electron paramagnetic resonance and magnetic susceptibility (MS, χ)) comparison has been made for the kinetics of formation inherent to different types of thermodonors ...
  • Magnetic susceptibility of p-Si(B) single crystals grown in "vacancy" regime at presence of thermodonors created by thermal treatments at 450 °C 
    Babych, V.M.; Luchkevych, M.M.; Pavlovskyy, Yu.V.; Tsmots, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    By using the Faraday method and complex of electro-physical studies (Hall effect, ESR, etc.) the features of magnetic susceptibility (χ) of p-Si(B) crystals grown in “vacancy” regime and annealed at 450 °C are studied. ...
  • Manifestation of optical vortices on the surface of solids under irradiation with femtosecond laser pulses 
    Zubrilin, N.G.; Dmitruk, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Quasi-periodic microstructures containing dislocations are formed on the surfaces of metals and semiconductors under irradiation with high-power femtosecond laser pulses. Interpretation of microstructures as a result of ...
  • Manufacture and study of new polystyrene scintillators 
    Senchishin, V.G.; Vasilchuk, V.L.; Borisenko, A.Yu.; Lebedev, V.N.; Adadurov, A.F.; Khlapova, N.P.; Titskaja, V.D.; Koba, V.S.; Pelipyagina, L.E.; Miroshnichenko, L.A.; Leman, V.E.; Osadchenko, V.N.; Kluban, N.A.; Shydlovskij, V.G.; Mitsaj, L.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The main optical characteristics and radiation hardness of new polystyrene scintillator UPS98GC were studied. The scintillator UPS-98GC was compared to SCSN-81, produced by Kuraray Co. which is often used in high-energy ...
  • Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures 
    Zhuchenko, Z.Ya.; Tarasov, G.G.; Lavorik, S.R.; Mazur, Yu.I.; Valakh, M.Ya.; Kissel, H.; Masselink, W.T.; Mueller, U.; Walther, C. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    A photoluminescence (PL) study of pseudomorphic modulation-doped AlxGa₁₋xAs/Iny Ga₁₋yAs/GaAs heterostructures possessing high electron density shows a fundamental change of the PL spectrum under excitation density increase. ...
  • Many-body theory of all-optical quantum well logic gates 
    Pereira Jr., M.F.; Prado, M.; Sampaio, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    A many-body theory, based on the solutions of generalized semiconductor Maxwell-Bloch equations for coupled-band multiple quantum wells is applied to the description of the optical non linearities responsible for the ...
  • Many particle and bandstructure effects in intersubband quantum well optics 
    Pereira Jr., M.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    In this paper, intersubband optical absorption spectra are computed from an optical susceptibility derived from the many-body formalism. The theory is valid for both non-equilibrium and equilibrium conditions. Numerical ...
  • Mass-spectrometric investigations of gas evolution 
    Asnis, Yu.A.; Baranskii, P.I.; Babich, V.M.; Zabolotin, S.P.; Ptushinskii, Yu.G.; Sukretnyi, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Method of mass-spectrometry with time-of-flight recording of the desorbed products was used to study the gas evolution of impurities from the subsurface layer of Si crystals molten by the electron beam (of ~2 mm² area) in ...
  • Mathematical model of photoacoustic microscopy with piezoelectric detection 
    Vertsanova, E.V.; Yakimenko, Yu.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Mathematical model is formulated for piezoelectric detection of the photoacoustics effect in optically semitransparent and thermally thick object with subsurface non-homogeneity in the case of free holding a piezodetector ...
  • Mathematic modeling the oxygen distribution mechanism in Si ingots during growing processes 
    Oksanich, A.P.; Pritchin, S.E.; Vasheruk, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The article provides specified mathematic modeling of oxygen distribution mechanism in Si ingots. Experimentally such model parameters as quartz melting speed for different melting zones, initial oxygen concentration in ...
  • Matrix model of inhomogeneous medium with circular birefringence in single scattering case 
    Savenkov, S.N.; Oberemok, Ye.A.; Yakubchak, V.V.; Barchuk, О.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The paper is devoted to the analysis of light scattering by inhomogeneous circular birefringent media in a single scattering case. The object under investigation is a circular birefringent crystalline slab with surface ...
  • Matrix models of bar graph data display for bicyclic excitation of the optoelectronic scale 
    Bushma, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    In this work, being based on the theory of sets and matrix formulation of the information area for a bar graph display the author obtained a matrix description for electric signals necessary to form two variants of ...
  • Measurement and analysis of reversible transformations of vortex-free and singular light fields produced by PDLC cells 
    Ponevchinsky, V.V.; Vasil’ev, V.I.; Soskin, M.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    In this work, we have firstly realized and investigated reversible transformations of vortex-free and singular optical complex landscapes appearing in a He-Ne laser beam transmitted through a PDLC cell, which is controlled ...

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