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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Сортувати за: Порядок: Результатів:

  • Metrological support of satellite-borne UV-spectrometry using a backscattering technique 
    Vashchenko, V.; Patlashenko, Zh.; Chernysh, E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Methods and physicotechnical facilities for examination, calibration and metrological testing of the main power spectral characteristics (total spectral sensitivity, scattered stray radiation, dynamic range) of the ...
  • Microanalysis of magnetic structure of yttrium-iron garnet films by using the scanning probe microscopy methods 
    Synhaivska, O.I.; Lytvyn, P.M.; Yaremiy, I.P.; Kotsyubynsky, A.O.; Kozub, V.V.; Solnstev, V.S.; Prokopenko, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    In this paper, the features of the microstructure of magnetic domains observed in ferrite-garnet films (FGF) have been presented. The studied FGF with orientation (111) were grown on gallium-gadolinium substrate by using ...
  • Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon 
    Neimash, V.B.; Puzenko, O.O.; Kraitchinskii, A.M.; Krasko, M.M.; Putselyk, S.; Claeys, C.; Simoen, E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Activation energy of thermal donors annealing increases from 1.7 to 2.5 eV on preliminary heat treatment of the Si crystals at 800⁰C. It is believed that this fact results from the dissolution of oxygen microfluctuations ...
  • Micropatterning in bistable cholesteric device with Bragg's reflection 
    Gritsenko, M.I.; Kucheev, S.I.; Lytvyn, P.M.; Tishenko, V.G.; Tkach, V.M.; Yelshansky, V.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    In this work, the method to form bistable patterning in a cholesteric cell with Bragg’s reflection in the visible spectral range is demonstrated. In order to reach this, we used a Si/SiO₂ structure in which a potential ...
  • Micro-Raman study of CNx composites subjected to high pressure treatment 
    Klyui, N.I.; Valakh, M.Ya.; Visotski, V.G.; Pascual, J.; Mestres, N.; Novikov, N.V.; Petrusha, I.A.; Voronkin, M.A.; Zaika, N.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    CNx films were deposited by reactive ion-plasma sputtering of a graphite target in an argon-nitrogen-acetone vapor atmosphere onto molybdenum substrates. After deposition the CNx composites were cut from substrates, formed ...
  • Micro-Raman study of nanocomposite porous films with silver nanoparticles prepared using pulsed laser deposition 
    Strelchuk, V.V.; Kolomys, O.F.; Golichenko, B.O.; Boyko, M.I.; Kaganovich, E.B.; Krishchenko, I.M.; Kravchenko, S.O.; Lytvyn, O.S.; Manoilov, E.G.; Nasieka, Iu.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Nanocomposite porous films with silver nanoparticle (Ag NP) arrays were prepared by the pulsed laser deposition from the back flux of erosion torch particles in argon atmosphere on the substrate placed at the target plane. ...
  • Microscopic parameters of a stochastic system and variance of physical quantity (ideal gas, electric current, thermal radiation of a black body) 
    Salkov, E.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1998)
    It is shown that the variance of a random physical quantity F can be expressed and directly calculated with the help of a microscopic parameter which under certain conditions may be called the invariable intrinsic ...
  • Microstructure of the relaxed (001) Si surface 
    Kiv, A.E.; Soloviev, V.N.; Maximova, T.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    MD computer simulation with the Stillinger-Weber potential have been performed to study a microstructure of silicon surface layers and relaxation processes induced by low energy ion beams. New peculiarities of relaxed (001) ...
  • Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals 
    Boltovets, N.S.; Basanets, V.V.; Ivanov, V.N.; Krivutsa, V.A.; Tsvir, A.V.; Belyaev, A.E.; Konakova, R.V.; Lyapin, V.G.; Milenin, V.V.; Soloviev, E.A.; Venger, E.F.; Voitsikhovskyi, D.I.; Kholevchuk, V.V.; Mitin, V.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    We investigated the parameters of silicon and gallium arsenide microwave diodes intended for different functions. Their heat-resistant contacts were made on the base of interstitial phases. A unified technological route ...
  • Microwave-induced optical non-linearity of amino acid crystals 
    Berezhinsky, L.I.; Dovbeshko, G.I.; Obukhovsky, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Changes (ΔR) of amino acid crystals infrared (IR) reflectance (R) induced by simultaneous irradiation of IR and microwaves (MW) or extremely high frequency (EHF) radiation have been observed. It was shown that under the ...
  • Microwave irradiation of gallium arsenide 
    Red'ko, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    To study an influence of the microwave irradiation on a spectrum of defect states in semiconductor compound GaAs, we used measurements of luminescence spectra within the range 0.5 to 2.04 eV at 77 К before and after long ...
  • Mid-IR impurity absorption in As₂S₃ chalcogenide glasses doped with transition metals 
    Paiuk, A.P.; Stronski, A.V.; Vuichyk, N.V.; Gubanova, A.A.; Krys’kov, Ts.A.; Oleksenko, P.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Room temperature IR impurity absorption spectra in 1 4000 7000 cm ( 4.1 - 25um ) region for chalcogenide glasses of As₂S₃ doped with chromium (0.5, 1 wt.%) and manganese (0.1, 1, 2, 5 wt.%) have been studied. The effects ...
  • (M, N)-exponential model in the theory of excitons 
    Piskovoi, V.N.; Strelniker, Ya.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1998)
    The one-exponential excitonic model, widely used in the theory of light propogation through spatially dispersive media, is generalized in order to take into account the simultaneous existing of M exciton states and N ...
  • Modeling high performance multilayer antireflection coatings for visible and infrared (3-5μm) substrates 
    Asghar, M.H.; Khan, M.B.; Naseem, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Multilayer antireflection coatings have been modeled in visible and IR (3-5μm) bands to reduce reflectance from glass, germanium (Ge), silicon (Si) and zinc selenide (ZnSe) substrates. The transmittance of bare glass ...
  • Modeling of light scattering in biotissue 
    Ivashko, P.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Different statistical modeling techniques of radiation propagation in epithelial tissue are considered. The two main approaches are: the modified classical Monte Carlo method for light propagation in turbid medium and ...
  • Modeling of photo-conversion efficiency for hydrogenated amorphous Si p-i-n structures 
    Sachenko, A.V.; Sokolovskyi, I.O.; Kazakevitch, A.; Shkrebtii, A.I.; Gaspari, F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    An analytical formalism to optimize the photoconversion efficiency η of hydrogenated amorphous silicon-based (a-Si:H) solar cells has been developed. This model allows firstly the optimization of a p⁺ -i-n sandwich in ...
  • Modeling of photons trapping effect on the performance of HPT-LED Optoelectronic Integrated Device (OEID) 
    Eladl, Sh.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The effect of photons trapped at the LED side due to total internal reflection on the transient behavior of an Optoelectronic Integrated Device (OEID) is considered in this paper. The device is composed of a Heterojunction ...
  • Modeling the process of removal aimed at cut traces on semiconductor wafers by using the method of contactless chemical-and-dynamical polishing 
    Pashchenko, G.A.; Kravetskyi, M.Yu.; Fomin, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Used in this work is the stationary model of the process of chemical-anddynamical polishing (CDP) the substrates in the case of balance between diffusion, convective and chemical fluxes. Obtained has been an analytical ...
  • Modelling of micro- and nanodomain arrays recorded in ferroelectrics-semiconductors by using atomic force microscopy 
    Morozovska, A.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    The thermodynamical theory of nanodomain tailoring in ferroelectrics-semiconductors allowing for semiconducting properties, screening and size effects is presented. The obtained analytical results prove that domains ...
  • Modelling of pyroelectric response in inhomogeneous ferroelectric-semiconductor films 
    Morozovska, A.N.; Eliseev, E.A.; Remiens, D.; Soyer, C. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    We have modified the Landau-Khalatnikov approach and shown that the pyroelectric response of inhomogeneous ferroelectric-semiconductor films can be described using six coupled equations for six order parameters: average ...

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