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Перегляд Відділення фізики і астрономії за автором "Izai, V.Yu."

Репозиторій DSpace/Manakin

Перегляд Відділення фізики і астрономії за автором "Izai, V.Yu."

Сортувати за: Порядок: Результатів:

  • Compositional studies of optical parameters in (Ag₃AsS₃)x(As₂S₃)₁₋x (x = 0.3; 0.6; 0.9) thin films 
    Studenyak, I.P.; Kranjčec, M.; Kutsyk, M.M.; Pal, Yu.O.; Neimet, Yu.Yu.; Izai, V.Yu.; Makauz, I.I.; Cserhati, C.; Kökényesi, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    (Ag₃AsS₃)x(As₂S₃)₁₋x (x = 0.3; 0.6; 0.9) thin films were deposited onto a silica substrate by rapid thermal evaporation. The amount of Ag-rich crystalline phase precipitates on the surfaces of the films increases with ...
  • Electrical and optical parameters of Cu₆PS₅I-based thin films deposited using magnetron sputtering 
    Studenyak, I.P.; Bendak, A.V.; Izai, V.Yu.; Guranich, P.P.; Kúš, P.; Mikula, M.; Grančič, B.; Zahoran, M.; Greguš, J.; Vincze, A.; Roch, T.; Plecenik, T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Cu₆PS₅I-based thin films were deposited onto silicate glass substrates by nonreactive radio-frequency magnetron sputtering. The chemical composition of thin films was determined using energy-dispersive X-ray spectroscopy. ...
  • Influence of cation substitution on phase transition and optical absorption edge in Cu₆(P₁₋xAsx)S₅I mixed crystals 
    Studenyak, I.P.; Kranjčec, M.; Kayla, M.I.; Izai, V.Yu.; Orliukas, A.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Cu₆(P₁₋xAsx)S₅I mixed crystals were grown using chemical vapour transport. Temperature isoabsorption investigations of optical absorption edge enable to reveal anomalies typical for the first- and second-order phase ...
  • Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals 
    Studenyak, I.P.; Izai, V.Yu.; Stephanovich, V.О.; Panko, V.V.; Kúš, P.; Plecenik, A.; Zahoran, M.; Greguš, J.; Roch, T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Implantation of Cu6PS5X (X = I, Br) single crystals was carried out for different values of fluence with using P⁺ ions; the energy of ions was 150 keV. For the implanted Cu₆PS₅X crystals, the structural studies were ...
  • Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals 
    Studenyak, I.P.; Izai, V.Yu.; Stephanovich, V.О.; Panko, V.V.; Kúš, P.; Plecenik, A.; Zahoran, M.; Greguš, J.; Roch, T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Implantation of Cu₆PS₅X (X = I, Br) single crystals was carried out for different values of fluence with using P+ ions; the energy of ions was 150 keV. For the implanted Cu₆PS₅X crystals, the structural studies were ...
  • Optical studies of as-deposited and annealed Cu₇GeS₅I thin films 
    Studenyak, I.P.; Bendak, A.V.; Rybak, S.O.; Izai, V.Yu.; Kúš, P.; Mikula, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Cu₇GeS₅I thin films were obtained by non-reactive radio frequency magnetron sputtering onto silicate glass substrates. Optical transmission spectra of as-deposited and annealed Cu₇GeS₅I thin films were measured in the ...
  • Structural, electrical and optical investigations of Cu₆PS₅Br-based thin film deposited by HiTUS technique 
    Studenyak, I.P.; Kutsyk, M.M.; Studenyak, V.I.; Bendak, A.V.; Izai, V.Yu.; Kúš, P.; Mikula, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Cu₆.₃₅P₁.₇₇S₄.₇₂Br₀.₁₅ thin film was obtained using the high target utilization sputtering onto c-cut sapphire substrates. X-ray diffraction studies show the film to be amorphous with some crystalline inclusions. SEM ...
  • Temperature studies of optical parameters in (Ag₃AsS₃)₀.₆(As₂S₃)₀.₄ thin films 
    Studenyak, I.P.; Kutsyk, M.M.; Rati, Y.Y.; Izai, V.Yu.; Kökényesi, S.; Daróci, L.; Bohdan, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    (Ag₃AsS₃)₀.₆(As₂S₃)₀.₄ thin films were deposited onto a silica substrate by using rapid thermal evaporation. The surfaces of the films were covered with Ag-rich crystalline micrometer-sized cones. The optical transmission ...
  • Temperature studies of optical parameters in (Ag₃AsS₃)₀.₆(As₂S₃)₀.₄ thin films 
    Studenyak, I.P.; Kutsyk, M.M.; Rati, Y.Y.; Izai, V.Yu.; Kökényesi, S.; Daróci, L.; Bohdan, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    (Ag₃AsS₃)₀.₆(As₂S₃)₀.₄ thin films were deposited onto a silica substrate by using rapid thermal evaporation. The surfaces of the films were covered with Ag-rich crystalline micrometer-sized cones. The optical transmission ...

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