Наукова електронна бібліотека
періодичних видань НАН України
періодичних видань НАН України
Initial stages of diffusion and phase formation in Sc/Si layered systems
Репозиторій DSpace/Manakin
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Initial stages of diffusion and phase formation in Sc/Si layered systems
Інші назви:
Початкові стадії дифузії і фазоутворення в шаруватих системах Sc/Si
Тема:
Characterization and properties
Посилання:
Initial stages of diffusion and phase formation in Sc/Si layered systems / D.L. Voronov, E.N. Zubarev, V.V. Kondratenko, Yu.P. Pershun, V.A. Sevryukova, Ye.A. Bugayev // Functional Materials. — 2008. — Т. 15, № 1. — С. 30-37. — Бібліогр.: 23 назв. — англ.
Дата:
2008
Переглядів:
688
Завантажень:
285
Анотація:
Kinetics of phase formation Sc/Si multilayers and Si/Sc/Si three-layers within the temperature range of 130-400°C has been studied by cross-sectional transmission electron microscopy and small-angle X-ray reflectometry. Growth of ScSi silicide governed by diffusion kinetics was observed at all temperatures. Two growth stages of nonparabolic and parabolic behavior were revealed. Initial nonparabolic stage is characterized by higher diffusion coefficient, which decreases during annealing in 20 times due to silicide structural relaxation. After annihilation of excess free volume a transition to parabolic growth takes place. Parameters of interdiffusion (activation energy E ≈1 eV and pre-exponential factor D₀ = 4.10⁻¹² m²s⁻¹) were determined for parabolic growth stage.
