Анотація:
The influence of structural relaxation on the electric resistivity p and structure parameters of low-alloyed Co—Cr—Si—B amorphous metallic alloys has been studied. These materials show a minimum in p(T) dependences. It has been shown that the structural relaxation of the studied alloys does not change the general shape of p(T) curves, but affects essentially the position of minimum Tmin. The high values of Tmin are due most likely not only to the presence of alloying component but also by a special composition of the metalloid group. The variation of Tmin during structural relaxation is caused by variation of the short-range ordering character.