Phonon and electron spectra of metallic bigraphene are analyzed in the presence of step-edge crystal imperfection.
Different geometries of step-edge are considered. The dynamic planar stability of the considered structure is
proved for temperatures above the ambient. The number of phonon states is shown to grow near the K-point of the
first Brillouin zone, compared to pristine graphene. It is found, that this type of defects causes substantially nonuniform
distribution of electron states and the pronounced increase in the number of states with energies close to
Fermi energy can be expected in electron spectrum of the graphene-based compounds. The performed calculations
are in good agreement with inelastic neutron, x-ray and Raman measurements.