Наукова електронна бібліотека
періодичних видань НАН України
періодичних видань НАН України
Pressure effect on the Fermi surface and electronic structure of LuGa₃ and TmGa₃
Репозиторій DSpace/Manakin
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Pressure effect on the Fermi surface and electronic structure of LuGa₃ and TmGa₃
Тема:
Электpонные свойства металлов и сплавов
Інший ID:
PACS: 71.18.+y, 71.20.Eh, 71.70.Gm
Посилання:
Pressure effect on the Fermi surface and electronic structure of LuGa₃ and TmGa₃ / V.B. Pluzhnikov, G.E. Grechnev, A. Czopnik, O. Eriksson // Физика низких температур. — 2005. — Т. 31, № 3-4. — С. 412-421. — Бібліогр.: 34 назв. — англ.
Підтримка:
The authors dedicate this work to the 90th anniversary
of E.S. Borovik, who was one of pioneers of the
Fermi surfaces studies [34].
We are grateful to Professors J. Klamut, T. Palewski,
V. Nizhankovskii, and I.V. Svechkarev for
their kind support and fruitful scientific discussions.
This work has been partly supported by The Swedish
Natural Science Research Council (VR) and The
Swedish Foundation for Strategic Research (SSF).
Дата:
2005
Переглядів:
608
Завантажень:
426
Анотація:
The Fermi surfaces and cyclotron masses of LuGa₃ and TmGa₃ compounds are studied by means
of the de Haas—van Alphen effect technique under pressure. The highly anisotropic pressure
dependences of the de Haas—van Alphen frequencies and cyclotron masses have been observed in
both compounds. Concurrently, the ab initio calculations of the volume-dependent band structures
have been carried out for these compounds, including ferromagnetic configuration phase of
TmGa₃, by employing a relativistic version of the full-potential linear muffin-tin orbital method
within the local spin-density approximation. The experimental data have been analysed on the basis
of the calculated volume-dependent band structures and compared with the corresponding pressure
effects in the isostructural compound ErGa₃.
