Active inductances controlled in GaAs MESFET technology

dc.contributor.author	Benbouza, M.S.
dc.contributor.author	Kenzai-Azizi, C.
dc.contributor.author	Merabtine, N.
dc.contributor.author	Saidi, Y.
dc.contributor.author	Amourache, S.
dc.date.accessioned	2017-06-15T03:07:15Z
dc.date.available	2017-06-15T03:07:15Z
dc.date.issued	2006
dc.identifier.citation	Active inductances controlled in GaAs MESFET technology / M.S. Benbouza, C. Kenzai-Azizi, N. Merabtine, Y. Saidi, S. Amourache // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 44-48. — Бібліогр.: 9 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 84.37.+q, 85.30. Tv
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/121617
dc.description.abstract	Two new structures of active inductance which implement MESFET transistors are proposed in this article. The technological parameters of the components of “inductances” are those of 0.8 µm MESFET technology. We expose the advantages of these new structures such as the adjustable character of the value of the active inductance like their limitation, and we compare them to those of the literature.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Active inductances controlled in GaAs MESFET technology	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA