Photoelectric properties of single crystals Ag₃In₅Se₉

dc.contributor.author	Huseynov, A.H.
dc.contributor.author	Mamedov, R.M.
dc.date.accessioned	2017-06-15T03:05:07Z
dc.date.available	2017-06-15T03:05:07Z
dc.date.issued	2006
dc.identifier.citation	Photoelectric properties of single crystals Ag₃In₅Se₉ / A.H. Huseynov, R.M. Mamedov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 25-28. — Бібліогр.: 7 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 72.40.+w
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/121614
dc.description.abstract	Low-resistance and high-resistance single crystals of Ag₃In₅Se₉ compound have been grown using the methods of zone recrystallization and slow cooling at a constant gradient of temperature. We have investigated spectral and lux-ampere characteristics of photoconductivity and determined the mechanism of recombination inherent to non-equilibrium current carriers. It has been ascertained that the capture of electrons emitted by donor centers is caused by a strong electric field applied to a sample.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Photoelectric properties of single crystals Ag₃In₅Se₉	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA