Electrical properties of InSb p-n junctions prepared by diffusion methods

dc.contributor.author	Sukach, A.V.
dc.contributor.author	Tetyorkin, V.V.
dc.contributor.author	Tkachuk, A.I.
dc.date.accessioned	2017-06-14T17:53:19Z
dc.date.available	2017-06-14T17:53:19Z
dc.date.issued	2016
dc.identifier.citation	Electrical properties of InSb p-n junctions prepared by diffusion methods / A.V. Sukach, V.V. Tetyorkin, A.I. Tkachuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 3. — С. 295-298. — Бібліогр.: 20 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	DOI: 10.15407/spqeo19.03.295
dc.identifier.other	PACS 73.40.Gk, 73.40.Kp
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/121603
dc.description.abstract	InSb p-n junctions were prepared by three diffusion methods, including isothermal, two-temperature and two-stage diffusion processes. The current-voltage characteristics were measured as a function of temperature and bias voltage. The highest values of the resistance-area product at zero bias have been obtained for the junctions prepared using the two-stage diffusion process.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Electrical properties of InSb p-n junctions prepared by diffusion methods	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA