Features of tensoresistance in single crystals of germanium and silicon with different dopants

dc.contributor.author	Baranskii, P.I.
dc.contributor.author	Gaidar, G.P.
dc.date.accessioned	2017-06-14T15:15:49Z
dc.date.available	2017-06-14T15:15:49Z
dc.date.issued	2016
dc.identifier.citation	Features of tensoresistance in single crystals of germanium and silicon with different dopants / P.I. Baranskii, G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 39-43. — Бібліогр.: 19 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	DOI: 10.15407/spqeo19.01.039
dc.identifier.other	PACS 61.82.Fk
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/121522
dc.description.abstract	Tensoresistance in single crystals of germanium and silicon with different dopants but under practically equal charge carrier concentrations have been investigated. The features of ρX /ρ₀ = f(X) function, which depend on individual physical-chemical properties of dopants, have been discussed in this paper.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Features of tensoresistance in single crystals of germanium and silicon with different dopants	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA