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періодичних видань НАН України
періодичних видань НАН України
The first principle calculation of electronic and optical properties of AlN, GaN and InN compounds under hydrostatic pressure
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2006, том 9
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2006, № 2
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| dc.contributor.author | Berrah, S. | |
| dc.contributor.author | Abid, H. | |
| dc.contributor.author | Boukortt, A. | |
| dc.date.accessioned | 2017-06-14T10:10:12Z | |
| dc.date.available | 2017-06-14T10:10:12Z | |
| dc.date.issued | 2006 | |
| dc.identifier.citation | The first principle calculation of electronic and optical properties of AlN, GaN and InN compounds under hydrostatic pressure / S. Berrah, H. Abid, A. Boukortt // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 12-16. — Бібліогр.: 43 назв. — англ. | uk_UA |
| dc.identifier.issn | 1560-8034 | |
| dc.identifier.other | PACS 71.20.Mq, 78.40.Fy | |
| dc.identifier.uri | http://dspace.nbuv.gov.ua/handle/123456789/121424 | |
| dc.description.abstract | Numerical simulation based on FPLAPW calculations is applied to study the lattice parameters, bulk modulus, band energy and optical properties of the zincblende binary solids AlN, GaN, InN under hydrostatic pressure. The results obtained are in a good agreement with experimental and theoretical values. | uk_UA |
| dc.description.sponsorship | We would like to acknowledge S.Q. Wang from Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese (republic of China) and K. Louzazna from university of Béjaia (Algéria) for their help. | uk_UA |
| dc.language.iso | en | uk_UA |
| dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
| dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
| dc.title | The first principle calculation of electronic and optical properties of AlN, GaN and InN compounds under hydrostatic pressure | uk_UA |
| dc.type | Article | uk_UA |
| dc.status | published earlier | uk_UA |
