Scattering mechanisms of electrons in monocrystalline PbTe, PbSe and PbS

Домашня сторінка
→
Фізико-технічні та математичні науки
→
Відділення фізики і астрономії
→
Semiconductor Physics Quantum Electronics & Optoelectronics
→
Semiconductor Physics Quantum Electronics & Optoelectronics, 2002, том 5
→
Semicond. Physics Quantum Electronics & Optoelectronics, 2002, № 4
→
Переглянути статтю

dc.contributor.author	Freik, D.M.
dc.contributor.author	Nykyruy, L.I.
dc.contributor.author	Shperun, V.M.
dc.date.accessioned	2017-06-14T07:58:56Z
dc.date.available	2017-06-14T07:58:56Z
dc.date.issued	2002
dc.identifier.citation	Scattering mechanisms of electrons in monocrystalline PbTe, PbSe and PbS / D.M. Freik, L.I. Nykyruy, V.M. Shperun // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 362-367. — Бібліогр.: 25 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 71.15.Cr, 72.10.-d, 72.20.-Dp.
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/121369
dc.description.abstract	The theoretical analysis of carrier scattering mechanisms in electronic lead chalcogenide crystals was carried out. The calculation of carrier mobility in wide temperature (4.2-300 К) and concentration (10¹⁶-10²⁰ сm⁻³) ranges is carried out from the viewpoint of interaction of conductivity electrons with deformation potentials of acoustic and optical phonons, polarizing potential of optical phonons, screening Coulombic and short-range potentials of vacancies. It has been shown that the agreement of theoretical and experimental results takes place when taking into account the carrier scattering both on phonons and ionized vacancies.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Scattering mechanisms of electrons in monocrystalline PbTe, PbSe and PbS	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA