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dc.contributor.author |
Strelchuk, V.V. |
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dc.contributor.author |
Valakh, M.Ya. |
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dc.contributor.author |
Vuychik, M.V. |
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dc.contributor.author |
Ivanov, S.V. |
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dc.contributor.author |
Kop'ev, P.S. |
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dc.contributor.author |
Shubina, T.V. |
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dc.date.accessioned |
2017-06-14T07:37:47Z |
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dc.date.available |
2017-06-14T07:37:47Z |
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dc.date.issued |
2002 |
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dc.identifier.citation |
High-efficient up-conversion of photoluminescence in CdSe quantum dots grown in ZnSe matrix / V.V. Strelchuk, M.Ya. Valakh, M.V. Vuychik, S.V. Ivanov, P.S. Kop'ev, T.V. Shubina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 343-346. — Бібліогр.: 13 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
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dc.identifier.other |
PACS: 78.55.Et, 78.66.Hf, 68.66.Hb |
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dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/121339 |
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dc.description.abstract |
The intensive up-conversion photoluminescence at low temperatures in CdSe/ZnSe structures with single CdSe inserts of the nominal thickness 1.5 monolayer was observed. Excitation power dependensies show a nearly quadratic character up-converted photoluminescence signal from CdSe quantum dots. Up-conversion photoluminescence mechanism was interpreted on the basis of a non-linear process of two-step two-photon absorption through deep defect states including cation vacancies localized at the interface of quantum dots. This observation of photoluminescence up-conversion demonstrates the influence of quantum dot environment on its properties. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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dc.title |
High-efficient up-conversion of photoluminescence in CdSe quantum dots grown in ZnSe matrix |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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