Photoelectric properties of metal-porous silicon-silicon planar heterostructures

Домашня сторінка
→
Фізико-технічні та математичні науки
→
Відділення фізики і астрономії
→
Semiconductor Physics Quantum Electronics & Optoelectronics
→
Semiconductor Physics Quantum Electronics & Optoelectronics, 2002, том 5
→
Semicond. Physics Quantum Electronics & Optoelectronics, 2002, № 4
→
Переглянути статтю

dc.contributor.author	Brodovoi, A.V.
dc.contributor.author	Brodovoi, V.A.
dc.contributor.author	Skryshevskyi, V.A.
dc.contributor.author	Bunchuk, S.G.
dc.contributor.author	Khnorozok, L.M.
dc.date.accessioned	2017-06-14T07:35:56Z
dc.date.available	2017-06-14T07:35:56Z
dc.date.issued	2002
dc.identifier.citation	Photoelectric properties of metal-porous silicon-silicon planar heterostructures / A.V. Brodovoi, V.A. Brodovoi, V.A. Skryshevskyi, S.G. Bunchuk, L.M. Khnorozok // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 395-397. — Бібліогр.: 14 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 79.60.Jv
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/121336
dc.description.abstract	Dark and light I-V characteristics as well as spectral curves of planar Ni-porous silicon-p-Si-Ni heterostructures have been studied. It is shown that photogeneration in heterostructure occurs both in the region of thin porous silicon layer and p-Si base. Avalanche breakdown is observed in the heterostructure at applied voltage biases V > 8-10 V and T = 77 K. The coefficient of multiplying at V = 11 V achieves 60 (dark) and 200 (light), which is close to that of silicon n+-p-i-p+ avalanche photodiodes.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Photoelectric properties of metal-porous silicon-silicon planar heterostructures	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA