Наукова електронна бібліотека
періодичних видань НАН України
періодичних видань НАН України
Surface polariton excitation in ZnO films deposited using ALD
Репозиторій DSpace/Manakin
- Домашня сторінка
- →
- Фізико-технічні та математичні науки
- →
- Відділення фізики і астрономії
- →
- Semiconductor Physics Quantum Electronics & Optoelectronics
- →
- Semiconductor Physics Quantum Electronics & Optoelectronics, 2015, том 18
- →
- Semicond. Physics Quantum Electronics & Optoelectronics, 2015, № 4
- →
- Переглянути статтю
JavaScript is disabled for your browser. Some features of this site may not work without it.
| dc.contributor.author | Venger, E.F. | |
| dc.contributor.author | Melnichuk, L.Yu. | |
| dc.contributor.author | Melnichuk, A.V. | |
| dc.contributor.author | Semikina, T.V. | |
| dc.date.accessioned | 2017-06-13T18:28:05Z | |
| dc.date.available | 2017-06-13T18:28:05Z | |
| dc.date.issued | 2015 | |
| dc.identifier.citation | Surface polariton excitation in ZnO films deposited using ALD / E.F. Venger, L.Yu. Melnichuk, A.V. Melnichuk, T.V. Semikina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 422-427. — Бібліогр.: 15 назв. — англ. | uk_UA |
| dc.identifier.issn | 1560-8034 | |
| dc.identifier.other | DOI: 10.15407/spqeo18.04.422 | |
| dc.identifier.other | PACS 71.36.+c, 73.20.20.Mf | |
| dc.identifier.uri | http://dspace.nbuv.gov.ua/handle/123456789/121268 | |
| dc.description.abstract | The conductive ZnO films deposited using atomic layer deposition (ALD) on the optical glass substrates were studied using the modified method of the disturbed total internal reflection within the range 400…1400 cm⁻¹ for the first time. The frequency “windows” with the obtained excited surface phonon and plasmon-phonon polaritons have been found in the measured infrared reflectance spectra. The dispersion response of high and low frequency branches of the IR spectra have been presented. | uk_UA |
| dc.description.sponsorship | Author Semikina T.V. expresses gratitude to Prof. M.Godlewski (Warsaw, Poland) for possibility of providing this experimental work and deposition of ZnO films by using the ALD equipment Savannah-100 | uk_UA |
| dc.language.iso | en | uk_UA |
| dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
| dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
| dc.title | Surface polariton excitation in ZnO films deposited using ALD | uk_UA |
| dc.type | Article | uk_UA |
| dc.status | published earlier | uk_UA |
