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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2015, № 4 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2015, № 4 за назвою

Сортувати за: Порядок: Результатів:

  • Characterization of grain boundaries in CdTe polycrystalline films 
    Tetyorkin, V.V.; Sukach, A.V.; Boiko, V.A.; Tkachuk, A.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    CdTe polycrystalline films with the average size of grains within the range 10…360 μm were grown on sapphire substrates by using the modified close-spaced sublimation technique. Transverse (across the film) and lateral ...
  • Development, optimization and improvement of ZnSe crystal surfaces mechanical and chemical treatment and washing methods 
    Stanetska, А.S.; Tomashyk, V.N.; Stratiychuk, І.B.; Tomashyk, Z.F.; Kravetskyy, M.Yu.; Galkin, S.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The process of cutting, mechanical and chemical treatment of the undoped and doped ZnSe crystal surface has been studied. The chemical interaction of zinc selenide surface with bromine emerging solutions of H₂O₂ – HBr and ...
  • Electro-optical effects in 2D macroporous silicon structures with nanocoatings 
    Karachevtseva, L.A.; Lytvynenko, O.O.; Konin, K.P.; Parshyn, K.A.; Sapelnikova, O.Yuю; Stronska, O.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The near-IR light absorption oscillations in 2D macroporous silicon structures with microporous silicon layers, CdTe, surface nanocrystals and SiO₂ nanocoatings have been investigated. The electro-optical effect was taken ...
  • External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals 
    Vlaskina, S.I.; Mishinova, G.N.; Vlaskin, V.I.; Rodionov, V.E.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Influence of plastic deformation and high-temperature annealing (T = 2100 °C, t = 1 h) on SiC crystals with grown polytypic junctions demonstrating SF and DL spectra have been presented. SF-i and DL-i type luminescence are ...
  • Influence of nanostructured ITO films on surface recombination processes in silicon solar cells 
    Kostylyov, V.P.; Sachenko, A.V.; Serba, O.A.; Slusar, T.V.; Vlasyuk, V.M.; Tytarenko, P.O.; Chernenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    This paper describes the results of comparative studies of illumination currentvoltage characteristics and spectral characteristics of silicon solar cells with rear location of the collector p-n-junction for the cases of ...
  • Localized surface plasmon resonance in Au nanoprisms on glass substrates 
    Lopatynska, O.G.; Lopatynskyi, A.M.; Borodinova, T.I.; Chegel, V.I.; Poperenko, L.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Metal nanocrystals are actual objects for the modern biophysics mainly because of their usage in sensors based on localized surface plasmon resonance (LSPR) and as active substrates for surface-enhanced spectroscopies. ...
  • Long-wave light sensitivity of a thin film system based on PbI₂ and Cu 
    Sopinskyy, M.V.; Mynko, V.I.; Olkhovik, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Photostimulated interaction in a sandwich-like thin film system based on PbI₂ and Cu (photodoping effect) makes it possible to use the system as a recording medium. On the other hand, since the layer consisting of copper ...
  • Morphology of sulphur-terminated compound deposits condensed on different substrates in vacuum 
    Grytsenko, K.P.; Lytvyn, P.M.; Doroshenko, T.P.; Kolomzarov, Yu.V.; Bricks, J.L.; Kurdyukov, V.V.; Slominskii, Yu.L.; Tolmachev, O.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Thin films of new sulphur-terminated organic compounds were deposited by evaporation in vacuum onto the glass, silicone, gold and polytetrafluoroethylene substrates. The influence of compound chemical structure and substrate ...
  • Nanopatterning Au chips for SPR refractometer by using interference lithography and chalcogenide photoresist 
    Dan’ko, V.A.; Dorozinsky, G.V.; Indutnyi, I.Z.; Myn’ko, V.I.; Ushenin, Yu.V.; Shepeliavyi, P.E.; Lukaniuk, M.V.; Korchovyi, A.A.; Khrystosenko, R.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    This study reports on development of the interference lithography (IL) technique applying the resist based on chalcogenide glass films for fabrication of gold chips in the nform of periodic surface nanostructures for surface ...
  • Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film 
    Okhrimenko, O.B (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    We propose a phenomenological model that explains the changes in the optical spectra of the structures wide gap semiconductor – oxide film, which takes place as a result of short-term microwave treatment. To explain the ...
  • Photo-induced effects in (Ag₃AsS₃)₀.₆(As₂S₃)₀.₄ thin films and multilayers with gold nanoparticles 
    Neimet, Yu.Yu.; Studenyak, I.P.; Buchuk, M.Yu.; Bohdan, R.; Kökényesi, S.; Daróci, L.; Nemec, P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    (Ag₃AsS₃)₀.₆(As₂S₃)₀.₄ single layer thin films, as well as ones deposited onto glass substrates previously covered with gold nanoparticle (GNP) layers were studied. Conventional thermal evaporation and pulse laser deposition ...
  • Probabilistic approach to the analysis of regularities in behavior of material parameters of electronic equipment under action of external fields 
    Milenin, G.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    It has been shown that the dependence between the parameters of materials of electronic equipment and external fields is determined by the distribution function of the corresponding random variable. The obtained results ...
  • Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization 
    Naumov, A.V.; Kolomys, O.F.; Romanyuk, A.S.; Tsykaniuk, B.I.; Strelchuk, V.V.; Trius, M.P.; Avksentyev, A.Yu.; Belyaev, A.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The effect of self-heating on the transport characteristics and electronic properties of transistor AlGaN/GaN heterostructures was investigated. The electrical, micro-Raman and photoluminescence techniques were used for ...
  • Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP 
    Belyaev, A.E.; Boltovets, N.A.; Bobyl, A.B.; Kladko, V.P.; Konakova, R.V.; Kudryk, Ya.Ya.; Nasyrov, M.U.; Sachenko, A.V.; Slipokurov, V.S.; Slepova, A.S.; Safryuk, N.V.; Gudymenko, A.I.; Shynkarenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Presented in this paper are experimental data on structural properties of contact metallization and temperature dependence of the specific contact resistance for ohmic contacts Au–Ti–Pd–n⁺-InP and Au–Ti–Ge–Pd-n⁺-InP prepared ...
  • Surface polariton excitation in ZnO films deposited using ALD 
    Venger, E.F.; Melnichuk, L.Yu.; Melnichuk, A.V.; Semikina, T.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The conductive ZnO films deposited using atomic layer deposition (ALD) on the optical glass substrates were studied using the modified method of the disturbed total internal reflection within the range 400…1400 cm⁻¹ for ...
  • Thermal annealing and evolution of defects in neutron-irradiated cubic SiC 
    Bratus, V.Ya.; Melnyk, R.S.; Shanina, B.D.; Okulov, S.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    A careful study of neutron-irradiated cubic SiC crystals (3С-SiC(n)) has been performed using electron paramagnetic resonance (EPR) in the course of their thermal annealing within the 200…1100 °C temperature range. Several ...
  • Thermostabilized photodiode for monitoring radiation of medical lasers 
    Dobrovolsky, Yu.; Pidkamin, L.; Kuzenko, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The construction of cooled photodiode for medical lasers with non-linearity of output performance in the range from 10⁻⁸ to 10⁻¹ W not more than 1.05 % is suggested. Regulation of cooling the crystal of photodiode is ...

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