Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy

Домашня сторінка
→
Фізико-технічні та математичні науки
→
Відділення фізики і астрономії
→
Semiconductor Physics Quantum Electronics & Optoelectronics
→
Semiconductor Physics Quantum Electronics & Optoelectronics, 2000, том 3
→
Semicond. Physics Quantum Electronics & Optoelectronics, 2000, № 3
→
Переглянути статтю

dc.contributor.author	Kladko, V.P.
dc.contributor.author	Datsenko, L.I.
dc.contributor.author	Maksimenko, Z.V.
dc.contributor.author	Lytvyn, O.S.
dc.contributor.author	Prokopenko, I.V.
dc.contributor.author	Zytkiewicz, Z.
dc.date.accessioned	2017-06-13T16:16:49Z
dc.date.available	2017-06-13T16:16:49Z
dc.date.issued	2000
dc.identifier.citation	Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy / V.P. Kladko, L.I. Datsenko, Z.V. Maksimenko, O.S. Lytvyn, I.V. Prokopenko, Z. Zytkiewicz // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 343-348. — Бібліогр.: 20 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 61.10.E, N; 61.72.D; 68.55.L
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/121168
dc.description.abstract	Stoichiometry parameters as well as the microdefects ones for GaAs:Si/GaAs thin films grown by liquid-phase epitaxy were investigated by means of method of X-ray integrated reflectivity energy dependencies analysis for quasiforbidden reflections (200) in the interval of wavelengths near absorption K-edges of GaAs components.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA