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dc.contributor.author |
Zorenko, Yu. |
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dc.contributor.author |
Limarenko, L. |
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Konstankevych, I. |
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Pashkovsky, M. |
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Moroz, Z. |
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Solsky, I. |
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Grinev, B. |
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Nekrasov, V. |
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dc.contributor.author |
Borodenko, Yu. |
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dc.date.accessioned |
2017-06-13T15:06:07Z |
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dc.date.available |
2017-06-13T15:06:07Z |
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dc.date.issued |
2000 |
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dc.identifier.citation |
Scintillation characteristics of the single crystalline CdWO₄ and Bi₄Ge₃O₁₂ compounds doped with mercury-like ions / Yu. Zorenko, L.Limarenko, I. Konstankevych, M. Pashkovsky, Z. Moroz, I. Solsky, B. Grinev, V. Nekrasov, Yu. Borodenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 2. — С. 207-212. — Бібліогр.: 8 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
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dc.identifier.other |
PACS: 78.60.Ya, 78.70.- q |
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dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/121110 |
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dc.description.abstract |
Investigated are optical, luminescent and light-technical properties of the CdWO₄ and Bi₄Ge₃O₁₂ single crystals doped with mercury-like Bi³⁺ and Pb²⁺ impurities, respectively, with the aim of assertaining the possibility to match their spectral characteristics with a spectral sensitivity of semiconductor radiation detectors. It is established that the long-wave shift of the CdWO₄:Bi emission spectra and increase of the light yield in the sensitivity region of Si-PD up to 15-20% in comparison with this parameter for the CdWO₄, occuring at optimal level of the activator concentration 0.025–0.25 mass% Bi₂O₃ in the melt and contens of Li⁺ or Ag⁺ ions as compensators for providing the ratio of mentioned impurities not less than 1:(1.5÷3), is connected with emission of the (BiO₆⁹⁻) complexes with lmax = 560 nm and t = 0.8-4.2 µs at 300 K. The shift of the emission spectra of the Bi₄Ge₃O₁₂:Pb crystals into the red spectral region is caused by emission of the (PbO₆¹⁰⁻) complexes in the bands with lmax = 570 and 690 nm and t = 1.0 ms. In addition, the light yield of the Bi₄Ge₃O₁₂:Pb single crystals at impurity concentrations of 0.005–0.5 mass% PbO in the melt was not less than 1.0–0.8 in comparison with that of undoped analogs. |
uk_UA |
dc.description.sponsorship |
The work has been fulfilled under financial support of INTAS-Ukraine (project No 95/0166). |
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dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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dc.title |
Scintillation characteristics of the single crystalline CdWO₄ and Bi₄Ge₃O₁₂ compounds doped with mercury-like ions |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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