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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2000, № 2 за датою випуску

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2000, № 2 за датою випуску

Сортувати за: Порядок: Результатів:

  • Functionally graded PbTe-based compound for thermoelectric applications 
    Dashevsky, Z.; Dariel, M.P.; Shusterman, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The present study summarizes a feasibility study of the influence of the graded indium profile that is set up by the diffusion of indium from an external source, on the transport properties of PbTe crystals. PbTe crystals ...
  • Optical properties and fine faulty structure of sapphire crystals grown in low pressure CO gas atmosphere 
    Puzikov, V.M.; Danko, A.Ya.; Adonkin, G.T.; Sidelnikova, N.S.; Tkachenko, V.F.; Budnikov, A.T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Presented in this paper are the results of the study of optical characteristics and fine faulty structure of big sapphire crystals grown in a CO-based low pressure (0.1...0.3 torr) gas atmosphere. Optimal conditions for ...
  • Small-grained detector of ionizing radiation based on ZnSe(Te) 
    Volkov, V.G.; Gavrilyuk, V.P.; Galchinetskii, L.P.; Grinyov, B.V.; Katrunov, K.A.; Ryzhikov, V.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    A highly efficient ZnSe(Te) scintillation detector combined with Si-photodiode has been developed. A conglomerate made up of ZnSe(Te) grains is used as a scintillator. Optimal shape of the grains, reflecting cover and ...
  • Specificity of high-pure monocrystalline silicon production for various registering and converting devices 
    Trubitsyn, Yu.V.; Zverev, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    In this paper, recent results of studies focused on detector-grade silicon monocrystals production are summarized and systematized. Described are the manufacturing technology of silicon rod with a diameter up to 105 mm and ...
  • Rapidly grown KDP crystals 
    Salo, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Results of the study of optical characteristics, real structure and laser damage threshold of KDP crystals rapidly grown in the direction of a prespecified angle of synchronism (θ = 59°) are described in the present paper. ...
  • Manufacture and study of new polystyrene scintillators 
    Senchishin, V.G.; Vasilchuk, V.L.; Borisenko, A.Yu.; Lebedev, V.N.; Adadurov, A.F.; Khlapova, N.P.; Titskaja, V.D.; Koba, V.S.; Pelipyagina, L.E.; Miroshnichenko, L.A.; Leman, V.E.; Osadchenko, V.N.; Kluban, N.A.; Shydlovskij, V.G.; Mitsaj, L.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The main optical characteristics and radiation hardness of new polystyrene scintillator UPS98GC were studied. The scintillator UPS-98GC was compared to SCSN-81, produced by Kuraray Co. which is often used in high-energy ...
  • Recording of rainbow holograms using As₂Se₃ amorphous layers 
    Minko, V.I.; Indutnyy, I.Z.; Romanenko, P.F.; Kudryavtsev, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The simple method of phase-relief rainbow master-hologram recording using the only laser has been developed. In this method at both recording steps (a normal transmission hologram and phase-relief sunlight-viewable master ...
  • New interpretation of the boundary diffracted wave origin 
    Anokhov, S.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The important improvement for Young's model of diffraction is proposed. This interpretation is based on the statement about the existence of the energy transfer process directed from the remaining field towards the boundary ...
  • Simulation of obliquely incident light propagation through a general twisted nematic liquid crystal cell by the Jones matrix technique 
    Valyukh, S.; Slobodyanyuk, A.; Sorokin, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The simple Jones matrix technique was applied for finding intensity of obliquely incident light that passes through a plate of a uniaxial uniform medium that later was extended to general twisted nematic liquid crystal ...
  • Microstructure of the relaxed (001) Si surface 
    Kiv, A.E.; Soloviev, V.N.; Maximova, T.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    MD computer simulation with the Stillinger-Weber potential have been performed to study a microstructure of silicon surface layers and relaxation processes induced by low energy ion beams. New peculiarities of relaxed (001) ...
  • The effect of oxygen-containing anions on luminescent properties of CsI 
    Shpilinskaya, L.N.; Zaslavsky, B.G.; Kovaleva, L.V.; Vasetsky, S.I.; Kudin, A.M.; Mitichkin, A.I.; Charkina, T.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    It has been found that from the series of oxygen-containing impurities CO₃²⁻, SO₄²⁻, HCO₃–, OH–, IO₃–, NO₃–, NO₂–, CNO–, BO₂– only the bivalent ions stimulate an intensive blue luminescence in CsI crystals at UV- or ...
  • Scintillators based on zinc selenide and ticor for detection of charged particles 
    Ryzhikov, V.D.; Danshin, E.A.; Starzhinski, N.G.; Losseva, E.A.; Chernikov, V.V.; Litvinov, L.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Studies of charged particle detectors based on ZnSe(Te) and Al₂O₃(Ti⁺³) (ticor) optically connected with photodiodes (PD) of S3590 type are reported. The charge-sensitive preamplifier connected with PD had equivalent noise ...
  • Radioluminescent, thermoluminescent and dosimetric properties of X-ray phosphors 
    Ignatovych, M.; Kelemen, A.; Otvas, N.; Peto, A.; Ogenko, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Time-resolved radioluminescence (RL) of X-ray phosphors: BaFCl:Eu, ZnS.CdS:Ag and Y₂О₃:Еu, which exhibited ultraviolet (lmax = 390 nm), yellow-green, (lmax = 530 nm) and red (lmax=620 nm) luminescence respectively, have ...
  • Multiwave laser source for simultaneous sounding ozone and critically related to ozone chemicals 
    Baschenko, S.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The scheme of multiwave laser source, suitable for simultaneous probing ozone and chemicals critically related to ozone (such as HCl, ClONO₂, N₂O₅, HNO₃) participating in its formation and destruction, when using differential ...
  • Strong thermostable interference coatings for IR optical elements 
    Zagoruiko, Yu.A.; Fedorenko, O.A.; Kovalenko, N.O.; Mateychenko, P.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Interference ZnO coatings for IR optical elements are obtained by the method of photothermal oxidation on the surface of crystalline ZnSe. Investigated are their mechanical and optical properties. The obtained oxide coatings ...
  • Radiation-induced changes in infra-red spectrum of black zinc diphosphide monocrystals 
    Kudin, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    For the first time the effect of ionizing particles of different type (gamma-quanta, electrons) and neutrons upon infra-red spectra of zinc diphosphide has been studied. It was shown that the defects of phosphorus sublattice, ...
  • Physical properties of ZnSe-MgSe, ZnSe-CdS solid solutions and possibilities of their application in IR engineering 
    Zagoruiko, Yu.A.; Fedorenko, O.A.; Kovalenko, N.O.; Rom, M.A.; Mateychenko, P.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The vertical Bridgman method is used to obtain crystals of Zn₁₋x Mgx Se and ZnSe-CdS solid solutions (with 0.03 Ј x Ј 0.55 and Cd concentrations varying from 0.3 to 35 at.%, respectively). The composition of the samples ...
  • Induced polar materials for intense radiation monitoring 
    Blonsky, I.V.; Kosorotov, V.F.; Shchedrina, L.V.; Levash, L.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Theoretical and experimental researches on the electric potential spatial distribution in thin crystal plates of zinc selenide and quartz, presented in this paper, is a constituent part of a common approach elaborated for ...
  • Calculation of absorption coefficients of InSb₁₋xBix solid solutions 
    Vyklyuk, J.I.; Deibuk, V.G.; Rarenko, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Using local empirical pseudopotential with spin-orbit interaction taking into account the electron band structure of InSb₁₋xBix in virtual crystal approximation is calculated. For binary compounds InSb and InBi characteristic ...
  • Effect of growth conditions on structure quality of KDP crystals 
    Salo, V.I.; Tkachenko, V.F.; Kolybayeva, M.I.; Pritula, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The effect of different variable crystallization parameters (supersaturation, solution acidity, degree of the solution purity, hydrodynamic growth regime) on structural quality and optical homogeneity of KDP crystals grown ...

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