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dc.contributor.author |
Parfenyuk, O.A. |
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dc.contributor.author |
Ilashchuk, M.I. |
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dc.contributor.author |
Chupyra, S.M. |
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dc.contributor.author |
Burachek, V.R. |
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dc.contributor.author |
Korbutyak, D.V. |
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dc.contributor.author |
Krylyuk, S.G. |
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dc.contributor.author |
Vakhnyak, N.D. |
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dc.date.accessioned |
2017-06-13T11:11:40Z |
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dc.date.available |
2017-06-13T11:11:40Z |
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dc.date.issued |
2005 |
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dc.identifier.citation |
Influence of low-temperature annealing on the state of CdTe surface / O.A. Parfenyuk, M.I. Ilashchuk, S.M. Chupyra, V.R. Burachek, D.V. Korbutyak, S.G. Krylyuk, N.D. Vakhnyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 50-53. — Бібліогр.: 17 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
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dc.identifier.other |
PACS: 72.80.Ey, 78.55.Et, 81.40.Rs, 81.40T |
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dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/120961 |
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dc.description.abstract |
Influence of low-temperature annealing on electrical and luminescent properties of semi-insulating n-CdTe:Sn is studied. It is shown that annealing at T ≥ 453 K modifies a near-surface layer of the crystals and this enhances the hole component of the conductivity. It is explained by Cd evaporation and subsequent enrichment of the near-surface layer with cadmium vacancies. Results of electrical measurements are confirmed by our low-temperature photoluminescence experiments. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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dc.title |
Influence of low-temperature annealing on the state of CdTe surface |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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