Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings

dc.contributor.author	Gaidar, G.P.
dc.date.accessioned	2017-06-12T18:05:39Z
dc.date.available	2017-06-12T18:05:39Z
dc.date.issued	2015
dc.identifier.citation	Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 53-56. — Бібліогр.: 13 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 61.82.Fk
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/120727
dc.description.abstract	Features of changes in the electrophysical parameters (concentrations of charge carriers ne and their mobilities μ ) in heavily doped n-Ge <As> single crystals, which occur as a result of the series of thermoannealings (each for 0.5 h) over a wide temperature range (540 ≤T≤ 900 °C), have been investigated and explained.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA
dc.identifier.udc	DOI: 10.15407/spqeo18.01.053