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dc.contributor.author |
Godlewski, M. |
|
dc.contributor.author |
Surma, M. |
|
dc.contributor.author |
Ivanov, V.Yu. |
|
dc.contributor.author |
Surkova, T.P. |
|
dc.date.accessioned |
2017-06-11T14:29:01Z |
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dc.date.available |
2017-06-11T14:29:01Z |
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dc.date.issued |
2004 |
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dc.identifier.citation |
Mechanisms of radiative and nonradiative recombination in ZnSe:Cr and ZnSe:Fe / M. Godlewski, M. Surma, V.Yu. Ivanov, T.P. Surkova // Физика низких температур. — 2004. — Т. 30, № 11. — С. 1187–1193. — Бібліогр.: 18 назв. — англ. |
uk_UA |
dc.identifier.issn |
0132-6414 |
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dc.identifier.other |
PACS: 42.55.Px, 71.55.Gs, 78.55.Et |
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dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/120276 |
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dc.description.abstract |
Possible applications of ZnSe:Cr in optoelectronics are discussed. It is shown that 2+ to 1+
photo-ionization of chromium results in efficient pumping of Cr²⁺ intrashell emission and in energy
up-conversion from green to blue. A distinct difference in efficiency of the energy up-conversion
is observed between chromium and iron doped ZnSe samples. This difference we relate to a
very efficient Auger mechanism of photoluminescence quenching in Fe-doped samples. We further
demonstrate an anticorrelation of intensity of mid-infrared Cr emission and up-converted blue
emission of ZnSe. |
uk_UA |
dc.description.sponsorship |
This work was partly supported by the RFBR-Ural
(Grant 04-02-96096). |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
uk_UA |
dc.relation.ispartof |
Физика низких температур |
|
dc.subject |
Примесные состояния в полупроводниках с переходными элементами |
uk_UA |
dc.title |
Mechanisms of radiative and nonradiative recombination in ZnSe:Cr and ZnSe:Fe |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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