Chemical dissolution of indium arsenide in the Br₂-HBr solutions

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 1999, том 2
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Semicond. Physics Quantum Electronics & Optoelectronics, 1999, № 4
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dc.contributor.author	Tomashik, Z.F.
dc.contributor.author	Danylenko, S.G.
dc.contributor.author	Tomashik, V.N.
dc.contributor.author	Kravetski, M.Yu.
dc.date.accessioned	2017-06-11T14:07:54Z
dc.date.available	2017-06-11T14:07:54Z
dc.date.issued	1999
dc.identifier.citation	Chemical dissolution of indium arsenide in the Br₂-HBr solutions / Z.F. Tomashik, S.G. Danylenko, V.N. Tomashik, M.Yu. Kravetski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 73-75. — Бібліогр.: 10 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 81,65 C.
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/120255
dc.description.abstract	The nature and kinetics of InAs chemical dissolution and chemical cutting, in the bromine solutions in hydrobromic acid have been investigated. It was shown that at low (up to 6 vol.%) bromine concentrations the InAs dissolution rate grows linearly with bromine concentration. Such solutions may be used to chemically polish InAs. Solutions containing from 20 to 30 vol.% Br₂ in HBr dissolve InAs with the rate 25 to 50 µ/min forming polished surfaces with etch pits. Such solutions may be used to chemically cut indium arsenide.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Chemical dissolution of indium arsenide in the Br₂-HBr solutions	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA