Polishing of AlN/sapphire substrates obtained by thermochemical nitridation of sapphire

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Відділення фізико-технічних проблем матеріалознавства
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Functional Materials
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Functional Materials, 2013, том 20
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Functional Materials, 2013, № 2
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dc.contributor.author	Vovk, E.A.
dc.contributor.author	Budnikov, A.T.
dc.contributor.author	Nizhankovskyi, S.V.
dc.contributor.author	Kryvonogov, S.I.
dc.contributor.author	Krukhmalev, A.A.
dc.contributor.author	Dobrotvorskaya, M.V.
dc.date.accessioned	2017-06-11T05:45:05Z
dc.date.available	2017-06-11T05:45:05Z
dc.date.issued	2013
dc.identifier.citation	Polishing of AlN/sapphire substrates obtained by thermochemical nitridation of sapphire / E.A. Vovk, A.T. Budnikov, S.V. Nizhankovskyi, S.I. Kryvonogov, A.A. Krukhmalev, M.V. Dobrotvorskaya // Functional Materials. — 2013. — Т. 20, № 2. — С. 253-258. — Бібліогр.: 10 назв. — англ.	uk_UA
dc.identifier.issn	1027-5495
dc.identifier.other	DOI: dx.doi.org/10.15407/fm20.02.253
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/120073
dc.description.abstract	Physicochemical conditions and polishing suspension composition were established for polishing of AlN/sapphire templates obtained by thermochemical nitridation of sapphire. The use of the polishing suspension based on aerosil and KOH with pH 10.3 allowed to prepare the surface with a roughness Ra up to 1 nm. The morphology and element composition of AlN/sapphire surface at layer-by-layer removal of the nitridated layer were studied by the methods of atomic force microscopy and X-ray photoelectronic spectroscopy.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	НТК «Інститут монокристалів» НАН України	uk_UA
dc.relation.ispartof	Functional Materials
dc.subject	Technology	uk_UA
dc.title	Polishing of AlN/sapphire substrates obtained by thermochemical nitridation of sapphire	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA