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періодичних видань НАН України
періодичних видань НАН України
Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 1999, том 2
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- Semicond. Physics Quantum Electronics & Optoelectronics, 1999, № 3
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| dc.contributor.author | Venger, E.F. | |
| dc.contributor.author | Beliaev, A.A. | |
| dc.contributor.author | Boltovets, N.S. | |
| dc.contributor.author | Ermolovich, I.B. | |
| dc.contributor.author | Ivanov, V.N. | |
| dc.contributor.author | Konakova, R.V. | |
| dc.contributor.author | Milenin, V.V. | |
| dc.contributor.author | Voitsikhovski, D.I. | |
| dc.contributor.author | Figielski, T. | |
| dc.contributor.author | Makosa, A. | |
| dc.date.accessioned | 2017-06-10T08:01:34Z | |
| dc.date.available | 2017-06-10T08:01:34Z | |
| dc.date.issued | 1999 | |
| dc.identifier.citation | Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs / E.F. Venger, A.A. Beliaev, N.S. Boltovets, I.B. Ermolovich, V.N. Ivanov, R.V. Konakova, V.V. Milenin, D.I.Voitsikhovski, T. Figielski, A. Makosa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 57-61. — Бібліогр.: 7 назв. — англ. | uk_UA |
| dc.identifier.issn | 1560-8034 | |
| dc.identifier.other | PACS: 73.30; 85.30.H, K | |
| dc.identifier.uri | http://dspace.nbuv.gov.ua/handle/123456789/119864 | |
| dc.description.abstract | The analytical, structural and electrophysical techniques have been applied to studies of the thermal degradation mechanism appearing in diode structures with the Schottky barrier Au-Mo-TiBxGaAs. It was shown that the rapid thermal annealing at T = 600 °C during 60 sec in hydrogen atmosphere results in creating the ELS type center in the space charge region of GaAs. This center is represented by the complex VGa+VAs, which has been confirmed by photoluminescence measurements. It causes the appearance of excess current at the initial part of current-voltage characteristic. | uk_UA |
| dc.description.sponsorship | The work is supported by STCU, project 464. | uk_UA |
| dc.language.iso | en | uk_UA |
| dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
| dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
| dc.title | Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs | uk_UA |
| dc.type | Article | uk_UA |
| dc.status | published earlier | uk_UA |
