Relaxation of photodarkening in SiO-As₂(S,Se)₃ composite layers

Домашня сторінка
→
Фізико-технічні та математичні науки
→
Відділення фізики і астрономії
→
Semiconductor Physics Quantum Electronics & Optoelectronics
→
Semiconductor Physics Quantum Electronics & Optoelectronics, 1999, том 2
→
Semicond. Physics Quantum Electronics & Optoelectronics, 1999, № 2
→
Переглянути статтю

Relaxation of photodarkening in SiO-As₂(S,Se)₃ composite layers

Indutnyi, I.Z. ; Shepeliavyi, P.E. ; Indutnyi, V.I.

Інший ID: PACS 78.66J,F, 81.15, 78.40.P, 73.61.J, 73.50.M

URI: http://dspace.nbuv.gov.ua/handle/123456789/119861

Посилання: Relaxation of photodarkening in SiO-As₂(S,Se)₃ composite layers / I.Z. Indutnyi, P.E. Shepeliavyi, V.I. Indutnyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 59-62. — Бібліогр.: 11 назв. — англ.

Дата: 1999

Завантажень: 306

Relaxation of photodarkening in SiO-As₂(S,Se)₃ composite layers

Анотація:

Investigated in this work is the reversible photostimulated red absorption edge shift (photodarkening), ∆Eg, of As₂(S,Se)₃ nanoparticles embedded into the SiO matrix. As compared to continuous chalcogenide films, the remarkable ∆Eg increase (up to 4 times) with decreasing of chalcogenide particle sizes in composite SiO-As₂(S,Se)₃ layers was revealed. The exponential dependence of ∆Eg on storing time at different temperatures has been obtained. An activation energy of the transition of A₂2S₃ nanoparticles structure from a metastable photoexposed state to a ground annealed state is equal to 0.78 ± 0.06 eV. The effects are related to a spatial confinement of a photoexcited carrier diffusion length and an influence of particle sizes on intermediate-range order scale structure relaxation in the chalcogenide nanoparticles.

Показати повний запис статті