Features of photoinduced charge transfer in photomagnetic garnets YIG:Si and YIG:Co

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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2001, том 4
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Semicond. Physics Quantum Electronics & Optoelectronics, 2001, № 3
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dc.contributor.author	Davidenko, I.I.
dc.date.accessioned	2017-06-05T17:15:34Z
dc.date.available	2017-06-05T17:15:34Z
dc.date.issued	2001
dc.identifier.citation	Features of photoinduced charge transfer in photomagnetic garnets YIG:Si and YIG:Co / I.I. Davidenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 173-176. — Бібліогр.: 15 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 72.10.D, 72.20.J, 75.50.G, 78.20.E, 85.60
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/119269
dc.description.abstract	Features of charge transfer under influence of linearly polarized light in photomagnetic garnets YIG:Si and YIG:Co are clarified. Comparative analysis of these two gernets is necessary to create a basis for the theoretical model of photoinduced magnetic effects (PME) in garnets and in other materials as well as for explanation of experimental results of PME observation in YIG:Co even at room temperatures. Known experimental results for YIG:Co are adequately explained and described within the scope of developed simplified theoretical model.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Features of photoinduced charge transfer in photomagnetic garnets YIG:Si and YIG:Co	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA