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dc.contributor.author |
Berezhinsky, L.I. |
|
dc.contributor.author |
Venger, E.F. |
|
dc.contributor.author |
Matyash, I.E. |
|
dc.contributor.author |
Serdega, B.K. |
|
dc.date.accessioned |
2017-06-05T14:31:17Z |
|
dc.date.available |
2017-06-05T14:31:17Z |
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dc.date.issued |
2004 |
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dc.identifier.citation |
Spectra of the photo-electric phenomena physically differentiated on the light absorption factor / L.I. Berezhinsky, E.F. Venger, I.E. Matyash, B.K. Serdega // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 441-445. — Бібліогр.: 5 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
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dc.identifier.other |
PACS: 72.40.+w |
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dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/119230 |
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dc.description.abstract |
The pleochroism phenomena in photoconductivity of Ge samples and gate photoelectomotive force (photo-emf) of Si samples were experimentally investigated by a polarization modulation method. Anisotropy of dielectric properties was created by uniaxial compression. The spectral characteristics of the polarization difference describing above effects were measured. We found that: а) the pleochroism spectrum of
photoconductivity is a derivative with respect to the absorption factor of a photocurrent function; b) the pleochroism spectrum of the gate photo-emf contains dichroic components, determined by the sample thickness, diffusion length of majority carriers, and layer thickness of a spatial charge. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
|
dc.title |
Spectra of the photo-electric phenomena physically differentiated on the light absorption factor |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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