Galvanomagnetic phenomena in HgMnTe and HgCdMnTe single crystals

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2004, том 7
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Semicond. Physics Quantum Electronics & Optoelectronics, 2004, № 4
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dc.contributor.author	Ostapov, S.E.
dc.contributor.author	Rarenko, I.M.
dc.contributor.author	Tymochko, M.D.
dc.date.accessioned	2017-06-05T09:27:36Z
dc.date.available	2017-06-05T09:27:36Z
dc.date.issued	2004
dc.identifier.citation	Galvanomagnetic phenomena in HgMnTe and HgCdMnTe single crystals / S.E. Ostapov, I.M. Rarenko, M.D. Tymochko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 339-342. — Бібліогр.: 12 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 72.20.Dp; 72.20.Fr; 72.20.My
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/119211
dc.description.abstract	This paper presents theoretical and experimental investigations of narrow-gap semiconductors HgMnTe and HgCdMnTe. It has been shown that the comparison of temperature dependencies of the conductivity and Hall coefficient in the mixed conductivity region makes it possible to determine the content of cadmium and manganese, as well as the concentration of doping acceptor impurity.	uk_UA
dc.description.sponsorship	This work was financially supported by Science and Technology Center of Ukraine (STCU) under Project #1440.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Galvanomagnetic phenomena in HgMnTe and HgCdMnTe single crystals	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA