On the nature of the fine structure in emission spectra of XeCl laser

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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2004, том 7
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Semicond. Physics Quantum Electronics & Optoelectronics, 2004, № 3
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dc.contributor.author	Blonskyy, I.V.
dc.contributor.author	Gnatovskyy, A.V.
dc.contributor.author	Zubrilin, N.G.
dc.contributor.author	Pavlov, I.A.
dc.contributor.author	Chernomorets, M.P.
dc.date.accessioned	2017-06-04T16:35:15Z
dc.date.available	2017-06-04T16:35:15Z
dc.date.issued	2004
dc.identifier.citation	On the nature of the fine structure in emission spectra of XeCl laser / I.V. Blonskyy, A.V. Gnatovskyy, N.G. Zubrilin, I.A. Pavlov, M.P. Chernomorets // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 301-303. — Бібліогр.: 8 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 42.55.Lt, 42.60.Jf
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/119129
dc.description.abstract	Results of investigation of the fine structure existing in emission spectra of the transverse-discharge pumped XeCl laser are presented. Influence of selective components of the cavity on the structure of spectrum of induced emission is investigated. Conditions of manifestation in the emission spectra of fine structure caused by the molecules rotation are clarified. Generation frequencies in the region of 0–3 transition are measured.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	On the nature of the fine structure in emission spectra of XeCl laser	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA