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dc.contributor.author |
Mateleshko, N. |
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dc.contributor.author |
Mitsa, V. |
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dc.contributor.author |
Borkach, E. |
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dc.date.accessioned |
2017-06-04T15:53:59Z |
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dc.date.available |
2017-06-04T15:53:59Z |
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dc.date.issued |
2004 |
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dc.identifier.citation |
Raman spectra and electron microscopic investigations of the sections of modified As₂S₃ glasses / N. Mateleshko, V. Mitsa, E. Borkach // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 243-246. — Бібліогр.: 15 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
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dc.identifier.other |
PACS: 61.43.Fs, 78.30.-j, 78.30.g |
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dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/119118 |
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dc.description.abstract |
Chalcogenide vitreous semiconductors (ChVS) are used as memory elements, elements of fiber, integral and power optics [1–6]. The change of the synthesis conditions results in the change of structure and, as a consequence, physical parameters of ChVS [1]. It means that it is possible to find solution of the fabrication of glasses with high optical strength by using modification of ChVS structure [2]. The objective of the present work is to investigate the influence of the temperature-temporal conditions of the fabrication on the structure of As₂S₃ glasses by the method of the Raman scattering spectroscopy and electron microscopy and also to choose the conditions of fabrication of As₂S₃ glasses with the continuously bonded matrix of the structure suitable for power optics using this basis. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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dc.title |
Raman spectra and electron microscopic investigations of the sections of modified As₂S₃ glasses |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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