Наукова електронна бібліотека
періодичних видань НАН України
періодичних видань НАН України
Structure and properties of Mg, Al, Ti oxide and nitride layers formed by ion-plasma sputtering
Репозиторій DSpace/Manakin
JavaScript is disabled for your browser. Some features of this site may not work without it.
Structure and properties of Mg, Al, Ti oxide and nitride layers formed by ion-plasma sputtering
Тема:
Characterization and properties
Інший ID:
DOI: http://dx.doi.org/10.15407/fm22.01.034
Посилання:
Structure and properties of Mg, Al, Ti oxide and nitride layers formed by ion-plasma sputtering / V.Pidkova, I.Brodnikovska, Z.Duriagina, V.Petrovskyy // Functional Materials. — 2015. — Т. 22, № 1. — С. 34-39. — Бібліогр.: 8 назв. — англ.
Дата:
2014-12-12
Переглядів:
885
Завантажень:
652
Анотація:
Dielectric layers of Al₂O₃, MgO, AlN and TiO₂ were formed by using ion-plasma sputtering method. Their microstructure and electrophysical properties in the range of 20 - 400°C were investigated. The conductivity mechanism, depth of traps and losses mechanism were established. The ohmic contact formation was revealed in TiO₂/40X13 system through which an injection of charge carries from the alloy into the dielectric layer occurs and its contribution to the electric equivalent circuit of substitution was assessed.
