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періодичних видань НАН України
Structure and properties of Mg, Al, Ti oxide and nitride layers formed by ion-plasma sputtering
Репозиторій DSpace/Manakin
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Structure and properties of Mg, Al, Ti oxide and nitride layers formed by ion-plasma sputtering
Тема:
Characterization and properties
Інший ID:
DOI: http://dx.doi.org/10.15407/fm22.01.034
Посилання:
Structure and properties of Mg, Al, Ti oxide and nitride layers formed by ion-plasma sputtering / V.Pidkova, I.Brodnikovska, Z.Duriagina, V.Petrovskyy // Functional Materials. — 2015. — Т. 22, № 1. — С. 34-39. — Бібліогр.: 8 назв. — англ.
Дата:
2014-12-12
Переглядів:
870
Завантажень:
647
Анотація:
Dielectric layers of Al₂O₃, MgO, AlN and TiO₂ were formed by using ion-plasma sputtering method. Their microstructure and electrophysical properties in the range of 20 - 400°C were investigated. The conductivity mechanism, depth of traps and losses mechanism were established. The ohmic contact formation was revealed in TiO₂/40X13 system through which an injection of charge carries from the alloy into the dielectric layer occurs and its contribution to the electric equivalent circuit of substitution was assessed.
