Effect of La³⁺ ions on the habit of KDP crystals

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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2008, том 11
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Semicond. Physics Quantum Electronics & Optoelectronics, 2008, № 4
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dc.contributor.author	Javidi, S.
dc.contributor.author	Esmaeil Nia
dc.contributor.author	Aliakbari, N.
dc.contributor.author	Taheri, F.
dc.date.accessioned	2017-06-03T05:11:19Z
dc.date.available	2017-06-03T05:11:19Z
dc.date.issued	2008
dc.identifier.citation	Effect of La³⁺ ions on the habit of KDP crystals / S. Javidi, M. Esmaeil Nia, N. Aliakbari, F. Taheri // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 342-344. — Бібліогр.: 11 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 42.70.-a, 61.72.Ss, 61.80.Ed, 77.84.Fa
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/119078
dc.description.abstract	A few KDP (KH2PO4) and KDP: La³⁺ (LaCl₃) single crystals were grown being based on the temperature reduction method. Investigations show that the presence of three valent ions like La³⁺ could be a cause of retarded growth rate and induced crystalline lattice defects. Here the pure KDP crystals are compared with KDP: LaCl₃ before and after their exposure to gamma irradiation. Both types of crystals also were studied in aspect of other structural and optical properties.	uk_UA
dc.description.sponsorship	We thank the staff of Material Research School for their valuable assistance during these measurements.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Effect of La³⁺ ions on the habit of KDP crystals	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA