Photosensitive heterostructures CdTe-PbTe prepared by hot-wall technique

Домашня сторінка
→
Фізико-технічні та математичні науки
→
Відділення фізики і астрономії
→
Semiconductor Physics Quantum Electronics & Optoelectronics
→
Semiconductor Physics Quantum Electronics & Optoelectronics, 1999, том 2
→
Semicond. Physics Quantum Electronics & Optoelectronics, 1999, № 2
→
Переглянути статтю

dc.contributor.author	Movchan, S.
dc.contributor.author	Sizov, F.
dc.contributor.author	Tetyorkin, V.
dc.date.accessioned	2017-06-03T04:57:29Z
dc.date.available	2017-06-03T04:57:29Z
dc.date.issued	1999
dc.identifier.citation	Photosensitive heterostructures CdTe-PbTe prepared by hot-wall technique / S. Movchan, F. Sizov, V. Tetyorkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 84-87. — Бібліогр.: 9 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 71.28, 72.20, 73.40
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/119065
dc.description.abstract	Hot-wall technique has been used for preparation of CdTe-PbTe heterostructures. BaF₂ single crystals served as substrates. Electrical, photoelectric properties as well as noise spectra were investigated. Heterostructures exhibit photosensitivity up to room temperatures in the middle infrared (IR) region. In the heterostructures investigated at room temperature the 1/f noise is observed at frequencies much less compared to those ones observed in PbSe photoresistors (f = 3000 Hz) for the same IR region. Carrier transport mechanisms and band diagram of the heterostructures are briefly discussed.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Photosensitive heterostructures CdTe-PbTe prepared by hot-wall technique	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA