Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates

dc.contributor.author	Makhniy, V.P.
dc.contributor.author	Slyotov, М.М.
dc.contributor.author	Tkachenko, I.V.
dc.contributor.author	Slyotov, А.М.
dc.date.accessioned	2017-05-31T05:13:52Z
dc.date.available	2017-05-31T05:13:52Z
dc.date.issued	2012
dc.identifier.citation	Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates / V.P. Makhniy, М.М. Slyotov, I.V. Tkachenko, А.М. Slyotov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 338-339. — Бібліогр.: 6 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 78.66.-w
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118719
dc.description.abstract	Using the isovalent substitution method, CdSe heterolayers of cubic modification were obtained for the first time on single-crystal CdTe substrates, and their basic physical properties were studied.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA