Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor

dc.contributor.author	Vlasov, S.I.
dc.contributor.author	Saparov, F.A.
dc.contributor.author	Ismailov, K.A.
dc.date.accessioned	2017-05-30T16:16:49Z
dc.date.available	2017-05-30T16:16:49Z
dc.date.issued	2010
dc.identifier.citation	Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor / S.I. Vlasov, F.A. Saparov, K.A. Ismailov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 363-365. — Бібліогр.: 10 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 61.72.-y, 85.30.Hi, Kk
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118563
dc.description.abstract	We studied the effect of uniform compression on characteristics of Au–n-Si Schottky barrier diodes made of overcompensated semiconductor. It is shown that overcompensation is caused by formation of structural defects owing to thermal treatment of the initial silicon wafers.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA