Controlling the photoluminescence spectra of porous nc-Si–SiOx structures by vapor treatment

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2010, том 13
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Semicond. Physics Quantum Electronics & Optoelectronics, 2010, № 4
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Controlling the photoluminescence spectra of porous nc-Si–SiOx structures by vapor treatment

Dan’ko, V.A. ; Bratus, V.Ya. ; Indutnyi, I.Z. ; Lisovskyy, I.P. ; Zlobin, S.O. ; Michailovska, K.V. ; Shepeliavyi, P.E.

Інший ID: PACS 78.55.Mb, 79.60.Jv, 81.40.Ef

URI: http://dspace.nbuv.gov.ua/handle/123456789/118561

Посилання: Controlling the photoluminescence spectra of porous nc-Si–SiOx structures by vapor treatment / V.A. Dan’ko, V.Ya. Bratus’, I.Z. Indutnyi, I.P. Lisovskyy, S.O. Zlobin, K.V. Michailovska, P.E. Shepeliavyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 413-417. — Бібліогр.: 22 назв. — англ.

Підтримка: This work was partially supported by the project 1.1.7/18 of the State Special Scientific-Technical Program on the development and creation of sensor science intensive products for 2008-2012.

Дата: 2010

Завантажень: 388

Controlling the photoluminescence spectra of porous nc-Si–SiOx structures by vapor treatment

Анотація:

The effect of HF and H₂O₂ vapor treatment on the spectral composition and intensity of photoluminescence (PL) in porous oblique deposited nc-Si–SiOx structures have been studied using FTIR, electron-spin resonance (EPR) and PL measurements. As a result of HF vapor treatment, considerable PL intensity growth and blueshift of PL peak position are observed. It is suggested that the evolution of the PL spectra in HF vapor-treated samples can be attributed to selective-etching-induced decrease in Si nanoparticle dimensions and to passivation of Si dangling bonds (that are nonradiative recombination trap states) by hydrogen and oxygen. Additional treatment in H₂O₂ vapor results in additional nc-Si surface oxidation and reduction of nc-Si size. The possibility to control the PL characteristics (peak position and intensity) of the porous nc-Si–SiOx structures in a wide range by above treatments is shown.

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